IXGK120N60B3 IXYS, IXGK120N60B3 Datasheet - Page 3

• Manufacturer Part Number: IXGK120N60B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGK120N60B3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 280
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 145
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.7
• Rthjc, Max, Igbt, (°c/w): 0.16
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264

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200
180
160
140
120
100
200
180
160
140
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0
0
5
0.2
0.2
6
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.4
0.4
7
Fig. 5. Collector-to-Emitter Voltage
0.6
0.6
I
vs. Gate-to-Emitter Voltage
C
8
= 200A
0.8
100A
0.8
50A
V
9
1
CE
V
V
CE
1
- Volts
GE
- Volts
1.2
10
- Volts
1.2
1.4
V
11
GE
V
1.4
GE
= 15V
1.6
= 15V
11V
9V
11V
9V
12
1.6
J
J
1.8
= 125ºC
= 25ºC
T
13
J
1.8
= 25ºC
2
7V
5V
7V
5V
14
2.2
2
2.2
2.4
15
350
300
250
200
150
100
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
80
60
40
20
0
0
3.5
-50
0
V
Fig. 2. Extended Output Characteristics @ T
V
GE
GE
1
= 15V
= 15V
-25
4.0
11V
9V
2
Fig. 4. Dependence of V
0
4.5
5V
7V
3
Fig. 6. Input Admittance
Junction Temperature
T
J
25
- Degrees Centigrade
4
V
5.0
CE
V
GE
- Volts
T
50
5
J
- Volts
I
C
I
I
= 125ºC
C
C
= 200A
- 40ºC
5.5
= 100A
= 50A
25ºC
IXGK120N60B3
IXGX120N60B3
6
75
CE(sat)
7
6.0
100
on
8
J
6.5
= 25ºC
125
9
150
7.0
10