IXGK120N60A3 IXYS, IXGK120N60A3 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGK120N60A3
Manufacturer Part Number
IXGK120N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGK120N60A3.pdf
(6 pages)
Specifications of IXGK120N60A3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
200
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
120
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
260
Eoff, Typ, Tj=125°c, Igbt, (mj)
10.4
Rthjc, Max, Igbt, (°c/w)
0.16
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-264
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
110
100
160
140
120
100
90
80
70
60
50
40
30
20
80
60
40
20
25
1
Switching Times vs. Junction Temperature
t
T
V
r
J
t
R
V
CE
35
Switching Times vs. Gate Resistance
r
= 125ºC, V
CE
G
2
= 480V
= 1.5Ω , V
= 480V
45
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
3
t
GE
55
T
t
d(on)
GE
d(on)
J
= 15V
4
- Degrees Centigrade
= 15V
R
- - - -
65
- - - -
G
- Ohms
5
75
6
85
I
C
I
C
= 50A
7
I
I
95
= 100A
C
C
= 100A
= 50A
8
105
115
9
125
10
48
46
44
42
40
38
36
34
32
30
90
80
70
60
50
40
30
20
120
110
100
90
80
70
60
50
40
30
20
10
0
50
T
Switching Times vs. Collector Current
J
t
R
V
= 25ºC, 125ºC
55
r
CE
G
= 1.5Ω , V
= 480V
60
Fig. 19. Inductive Turn-on
t
65
d(on)
GE
= 15V
- - - -
70
I
C
- Amperes
75
80
IXGK120N60A3
IXGX120N60A3
85
90
IXYS REF: G_120N60A3(86)02-11-09-B
95
100
43
42
41
40
39
38
37
36
35
34
33
32
31