IXGH56N60A3 IXYS, IXGH56N60A3 Datasheet - Page 5

• Manufacturer Part Number: IXGH56N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGH56N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 150
• Ic110, Tc=110°c, Igbt, (a): 56
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 315
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.75
• Rthjc, Max, Igbt, (°c/w): 0.375
• Package Style: TO-247

© 2009 IXYS CORPORATION, All Rights Reserved
18
16
14
12
10
20
18
16
14
12
10
700
600
500
400
300
200
8
6
4
2
8
6
4
25
5
20
E
R
V
off
CE
G
I
I
35
C
= 5Ω
C
= 480V
10
= 44A
= 88A
Energy Loss vs. Junction Temperature
30
Switching Times vs. Collector Current
,
V
45
GE
Energy Loss vs. Gate Resistance
15
E
= 15V
on
Fig. 14. Inductive Switching
Fig. 12. Inductive Switching
Fig. 16. Inductive Turn-off
40
- - - -
55
T
20
J
- Degrees Centigrade
65
T
T
I
J
J
C
50
R
= 125ºC
= 25ºC
- Amperes
25
G
- Ohms
75
I
C
60
30
= 88A
85
t
R
V
f i
CE
G
E
T
V
= 5Ω , V
off
J
CE
= 480V
I
= 125ºC , V
35
C
95
= 480V
70
= 44A
GE
105
40
t
= 15V
d(off)
GE
80
E
on
= 15V
- - - -
115
- - - -
45
90
125
600
520
440
360
280
200
50
6.4
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0.0
8
7
6
5
4
3
2
1
0
18
16
14
12
10
540
520
500
480
460
440
420
400
380
600
550
500
450
400
350
300
250
8
6
4
2
0
20
5
25
E
R
V
I
C
off
G
CE
t
R
V
t
T
V
f i
CE
J
G
= 44A
f i
CE
= 5Ω
Switching Times vs. Junction Temperature
35
= 480V
10
= 125ºC, V
= 5Ω , V
30
= 480V
= 480V
Switching Times vs. Gate Resistance
,
Energy Loss vs. Collector Current
I
V
45
T
C
15
GE
J
GE
= 88A
Fig. 13. Inductive Switching
= 125ºC
E
t
= 15V
GE
Fig. 15. Inductive Turn-off
Fig. 17. Inductive Turn-off
t
40
d(off)
= 15V
on
d(off)
= 15V
55
- - - -
T
20
J
- - - -
T
- - - -
= 25ºC
J
- Degrees Centigrade
65
50
I
C
25
R
I
- Amperes
C
G
= 44A
75
- Ohms
IXGH56N60A3
30
60
85
35
95
70
40
105
I
C
80
= 88A
45
115
125
50
90
1100
1000
900
800
700
600
500
400
300
550
500
450
400
350
300
250
200
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0