IXGH56N60B3 IXYS, IXGH56N60B3 Datasheet

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IXGH56N60B3

Manufacturer Part Number
IXGH56N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGH56N60B3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
130
Ic110, Tc=110°c, Igbt, (a)
56
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
95
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.2
Rthjc, Max, Igbt, (°c/w)
0.375
Package Style
TO-247
GenX3
Medium-Speed Low Vsat PT
IGBT 5 - 40 kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
GES
J
JM
stg
L
SOLD
GE(th)
CE(sat)
CES
CGR
GEM
d
d
J
CES
= 25°C, Unless Otherwise Specified)
Test Conditions
TM
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting torque
Test Conditions
I
I
V
V
I
C
C
C
C
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C (Chip Capability)
= 110°C
= 25°C
= 25°C, 1ms
600V IGBT
= 15V, T
= 250μA, V
= 250μA, V
= V
= 0V, V
= 44A, V
CES,
VJ
V
GE
GE
GE
= 125°C, R
= ±20V
CE
CE
= 15V, Note 1
= 0V
= 0V
= V
GE
GE
= 1MΩ
G
= 5Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
IXGH56N60B3
- 55 ... +150
- 40 ... +150
600
Characteristic Values
Min.
3.0
V
I
CM
Maximum Ratings
CE
1.13/10
≤ V
= 150
± 20
± 30
350
330
150
300
260
130
600
600
CES
56
1.49
1.47
6
Typ.
±100 nA
Max.
1.80
Nm/lb.in.
500 μA
5.0
50 μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
V
I
V
TO-247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
Optimized for Low Conduction and
Square RBSOA
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Switching Losses
CES
CE(sat)
G
G
C
D
E
S
=
=
≤ ≤ ≤ ≤ ≤
C
TAB = Collector
600V
1.80V
56A
(TAB)
= Collector
DS100175(08/09)

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IXGH56N60B3 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 44A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGH56N60B3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 30 130 56 350 = 5Ω 150 G CM ≤ CES 330 - 55 ... +150 150 - 40 ...

Page 2

... V 25 CES 1.30 155 95 1. 2.34 220 165 2.20 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH56N60B3 TO-247 (IXGH) Outline Max Terminals Gate 3 - Source mJ Dim. Millimeter ns Min. A 4.7 165 ns A 2 ...

Page 3

... T = 25ºC J 160 140 120 100 IXGH56N60B3 Fig. 2. Extended Output Characteristics @ T = 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig ...

Page 4

... C ies 120 100 C oes res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH56N60B3 Fig. 8. Gate Charge V = 300V 40A 10mA 100 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC ...

Page 5

... IXGH56N60B3 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current off 5Ω 15V 480V Amperes C Fig ...

Page 6

... I = 72A 36A 18A 105 115 125 IXGH56N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 25ºC, 125º 480V ...

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