IXGQ50N60B4D1 IXYS, IXGQ50N60B4D1 Datasheet - Page 6

• Manufacturer Part Number: IXGQ50N60B4D1
• Description: PT Trench IGBTs
• Manufacturer: IXYS

Specifications of IXGQ50N60B4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 100
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 80
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-3P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
25
10
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
I
I
C
C
T
V
35
t
r i
J
CE
= 72A
= 36A
= 125ºC, V
= 400V
45
15
GE
55
Junction Temperature
t
d(on)
= 15V
T
J
Gate Resistance
- Degrees Centigrade
- - - -
65
R
20
G
- Ohms
75
R
V
t
85
25
r i
G
CE
= 10
= 400V
Ω
95
, V
GE
105
t
30
= 15V
d(on)
I
I
C
C
= 36A
= 72A
- - - -
115
125
35
55
50
45
40
35
30
25
66
60
54
48
42
36
30
24
140
120
100
80
60
40
20
0
15
Fig. 19. Inductive Turn-on Switching Times vs.
R
V
t
r i
G
CE
= 10
= 400V
25
Ω
, V
GE
t
d(on)
= 15V
35
T
Collector Current
J
- - - -
= 25ºC
T
J
= 125ºC
I
C
45
- Amperes
IXGH50N60B4D1
IXGQ50N60B4D1
55
65
IXYS REF: G_50N60B4(L5)03-23-11
75
55
50
45
40
35
30
25
20