IXGQ50N60C4D1 IXYS, IXGQ50N60C4D1 Datasheet - Page 4
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IXGQ50N60C4D1
Manufacturer Part Number
IXGQ50N60C4D1
Description
PT Trench IGBTs
Manufacturer
IXYS
Datasheet
1.IXGH50N60C4D1.pdf
(7 pages)
Specifications of IXGQ50N60C4D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
90
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
46
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
63
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
18
Rthjc, Max, Diode, (ºc/w)
1.6
Package Style
TO-3P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
0.1
45
40
35
30
25
20
15
10
10
0.00001
5
0
1
0
0
f
= 1 MHz
5
20
10
40
Fig. 7. Transconductance
Fig. 9. Capacitance
15
0.0001
60
I
V
C
CE
- Amperes
- Volts
20
80
25
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
100
T
J
= - 40ºC
30
125ºC
25ºC
120
0.001
35
Pulse Width - Second
140
40
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
100
0
T
R
dv / dt < 10V / ns
150
V
I
I
J
G
C
G
CE
= 125ºC
= 10
0.01
= 36A
= 10mA
= 300V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
20
200
250
40
300
Fig. 8. Gate Charge
Q
G
- NanoCoulombs
V
350
CE
60
- Volts
400
0.1
IXGQ50N60C4D1
IXGH50N60C4D1
450
80
500
550
100
600
120
650
1