IXGH50N60C4D1 IXYS, IXGH50N60C4D1 Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGH50N60C4D1
Manufacturer Part Number
IXGH50N60C4D1
Description
PT Trench IGBTs
Manufacturer
IXYS
Datasheet
1.IXGH50N60C4D1.pdf
(7 pages)
Specifications of IXGH50N60C4D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
90
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
46
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
63
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
18
Rthjc, Max, Diode, (ºc/w)
1.6
Package Style
TO-247
© 2011 IXYS CORPORATION, All Rights Reserved
0.001
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.01
40
35
30
25
20
15
10
0.1
2
1
0
10
5
0
0.00001
1
20
0
40
Fig. 21. Forward Voltage vs.
0.5
I
Fig. 24. Dynamic Parameter
RM
vs. Junction Temperature
T
60
J
- Degrees Centigrade
Forward Current
Q
T
r
J
1
V
80
= 150ºC
0.0001
F
- Volts
Fig. 27. Maximum Transient Thermal Impedance (for Diode)
100
1.5
120
100ºC
2
140
25ºC
0.001
Pulse Width - Second
160
2.5
1800
1600
1400
1200
1000
800
600
400
200
120
110
100
90
80
70
0
100
0
0.01
T
V
I
Fig. 22. Reverse Recovery Charge
J
R
F
= 100ºC
Fig. 25. Reverse Recovery Time
= 300V
= 30A, 15A, 7.5A
200
-di
400
vs. - di
-di
vs. - di
F
F
7.5A
/dt - A/µs
/dt - A/µs
0.1
15A
F
F
/dt
/dt
600
I
F
= 30A
T
V
J
800
R
= 100ºC
= 300V
1000
1000
1
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0
0
Fig. 26. Peak Forward Voltage & Forward
T
V
T
J
I
R
J
F
= 100ºC
= 300V
= 100ºC
= 15A
Fig. 23. Peak Reverse Current
200
200
Recovery Time vs. di
IXGQ50N60C4D1
IXGH50N60C4D1
400
400
-di
vs. - di
di
F
F
/dt - A/µs
/dt - A/µs
F
/dt
600
I
600
F
V
t
= 30A
f r
FR
F
/dt
800
800
15A
7.5A
1000
1000
2
1.5
1
0.5
0