IXGH50N60C4D1 IXYS, IXGH50N60C4D1 Datasheet - Page 7

• Manufacturer Part Number: IXGH50N60C4D1
• Description: PT Trench IGBTs
• Manufacturer: IXYS

Specifications of IXGH50N60C4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 90
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 46
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 63
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-247

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0.001
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.01
40
35
30
25
20
15
10
0.1
2
1
0
10
5
0
0.00001
1
20
0
40
Fig. 21. Forward Voltage vs.
0.5
I
Fig. 24. Dynamic Parameter
RM
vs. Junction Temperature
T
60
J
- Degrees Centigrade
Forward Current
Q
T
r
J
1
V
80
= 150ºC
0.0001
F
- Volts
Fig. 27. Maximum Transient Thermal Impedance (for Diode)
100
1.5
120
100ºC
2
140
25ºC
0.001
Pulse Width - Second
160
2.5
1800
1600
1400
1200
1000
800
600
400
200
120
110
100
90
80
70
0
100
0
0.01
T
V
I
Fig. 22. Reverse Recovery Charge
J
R
F
= 100ºC
Fig. 25. Reverse Recovery Time
= 300V
= 30A, 15A, 7.5A
200
-di
400
vs. - di
-di
vs. - di
F
F
7.5A
/dt - A/µs
/dt - A/µs
0.1
15A
F
F
/dt
/dt
600
I
F
= 30A
T
V
J
800
R
= 100ºC
= 300V
1000
1000
1
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0
0
Fig. 26. Peak Forward Voltage & Forward
T
V
T
J
I
R
J
F
= 100ºC
= 300V
= 100ºC
= 15A
Fig. 23. Peak Reverse Current
200
200
Recovery Time vs. di
IXGQ50N60C4D1
IXGH50N60C4D1
400
400
-di
vs. - di
di
F
F
/dt - A/µs
/dt - A/µs
F
/dt
600
I
600
F
V
t
= 30A
f r
FR
F
/dt
800
800
15A
7.5A
1000
1000
2
1.5
1
0.5
0