IXGT32N60CD1 IXYS, IXGT32N60CD1 Datasheet - Page 2

• Manufacturer Part Number: IXGT32N60CD1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGT32N60CD1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 55
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.85
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): 32
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
R
RM
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
rr
fs
off
on
off
F
oes
thJC
thCK
thJC
ies
res
g
ge
gc
Remarks: Switching times may
increase for V
higher T
Test Conditions
I
Pulse test, t
V
I
Remarks: Switching times may
increase for V
higher T
Inductive load, T
I
V
Test Conditions
I
t
I
V
I
Inductive load, T
I
V
F
F
F
C
C
C
C
R
CE
CE
CE
= I
= I
= I
= I
= I
= I
= 100 V
= 1 A; -di/dt = 100 A/ s; V
300 s, duty cycle d
= 25 V, V
= 0.8 V
= 0.8 V
C90
C90
C90
C90
C90
C90
; V
, V
, V
, V
, V
, V
J
J
CE
GE
GE
GE
or increased R
or increased R
GE
GE
CES
CES
= 10 V,
= 15 V, V
= 15 V
= 15 V
GE
= 0 V, -di
= 0 V, Pulse test
, R
, R
CE
CE
300 s, duty cycle
= 0 V, f = 1 MHz
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
G
G
J
J
= R
= R
= 25 C
= 125 C
CE
off
F
off
/dt = 100 A/ s
= 0.5 V
= 4.7
= 4.7
G
G
2 %
R
(T
(T
= 30 V T
CES
J
J
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
CES
CES
2 %
,
,
T
T
T
J
J
J
J
=
=150 C
= 100 C 100
= 25 C
min.
min.
25 C
Characteristic Values
Characteristic Values
4,835,592
4,850,072
2700
0.32
0.85
0.25
typ.
240
110
110
100
typ.
25
25
50
22
40
25
20
85
55
25
25
6
1
4,881,106
4,931,844
max.
max.
1.25 mJ
0.62 K/W
170
160
1.6
2.5
0.9 K/W
K/W
5,017,508
5,034,796
mJ
mJ
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
S
V
V
A
TO-247 AD Outline
5,049,961
5,063,307
Terminals: 1 - Gate
TO-268 Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
S
1
2
1
2
P
IXGH 32N60CD1
IXGT 32N60CD1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
3 - Emitter
Min.
4.7
2.2
2.2
1.0
Millimeter
5,187,117
5,237,481
.4
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
2 - Collector
5,486,715
5,381,025
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
P
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
6,306,728B1