IXYK120N120C3 IXYS, IXYK120N120C3 Datasheet

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IXYK120N120C3

Manufacturer Part Number
IXYK120N120C3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYK120N120C3

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
220
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
120
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
90
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
5.3
Rthjc, Max, Igbt (c/w)
0.10
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-264
1200V XPT
GenX3
High-Speed IGBTs
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
= 25°C (Chip Capability)
= 110°C
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
= 500μA, V
= V
= 0V, V
=
= 250μA, V
I
TM
C110
CES
, V
, V
IGBTs
GE
VJ
GE
GE
= ±20V
= 150°C, R
= 0V
CE
GE
= 15V, Note 1
= V
(PLUS247)
= 0V
GE
GE
= 1MΩ
G
= 1Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXYK120N120C3
IXYX120N120C3
1200
20..120 /4.5..27
Min.
Characteristic Values
3.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
Typ.
2.9
3.8
= 240
1500
1200
1200
±20
±30
660
V
120
175
300
260
220
160
60
CES
10
2
6
±100
Max.
Nm/lb.in.
1.5 mA
5.0
3.5
25
N/lb.
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
A
J
g
g
V
I
V
t
TO-264 (IXYK)
PLUS247 (IXYX)
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
International Standard Packages
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
G
C
E
G
= 1200V
= 120A
= 90ns
C
≤ ≤ ≤ ≤ ≤ 3.5V
E
E
Tab = Collector
DS100451(03/12)
Tab
= Emitter
Tab

Related parts for IXYK120N120C3

IXYK120N120C3 Summary of contents

Page 1

... CES GE = ±20V 0V, V GES 15V, Note 1 C110 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYK120N120C3 IXYX120N120C3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 220 160 120 660 1Ω 240 G CM ≤ ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYK120N120C3 IXYX120N120C3 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 7 0.10 °C/W °C/W ...

Page 3

... T = 25ºC 180 J 160 140 120 I = 240A C 100 120A 60A IXYK120N120C3 IXYX120N120C3 Fig. 2. Extended Output Characteristics @ 15V GE 10V 12V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2 ...

Page 4

... C ies 160 120 Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance aaaaa 0.001 0.01 Pulse Width - Seconds IXYK120N120C3 IXYX120N120C3 Fig. 8. Gate Charge V = 600V 120A 10mA 100 ...

Page 5

... Ω 15V 600V 130 CE 240 120 220 110 200 100 180 160 140 100 IXYK120N120C3 IXYX120N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V ...

Page 6

... 15V 600V 100A 50A 100 125 150 IXYK120N120C3 IXYX120N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 600V 150ºC, 25º Amperes ...

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