IXYH50N120C3 IXYS, IXYH50N120C3 Datasheet - Page 4

• Manufacturer Part Number: IXYH50N120C3
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYH50N120C3

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 105
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.0
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 57
• Eoff, Typ, Tj = 125°c, Igbt (mj): 1.47
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.20
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
0.01
100
0.1
60
50
40
30
20
10
10
0.00001
0
1
0
0
f
10
= 1 MHz
5
20
10
30
Fig. 7. Transconductance
Fig. 9. Capacitance
15
40
0.0001
I
V
C
CE
- Amperes
- Volts
50
20
60
25
Fig. 11. Maximum Transient Thermal Impedance
70
30
T
J
= - 40ºC
80
C ies
C oes
C res
125ºC
25ºC
0.001
35
90
Pulse Width - Second
100
40
110
100
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
200
0
T
R
dv / dt < 10V / ns
V
I
I
300
C
G
J
CE
G
0.01
= 125ºC
= 50A
= 10mA
= 5
= 600V
20
Fig. 10. Reverse-Bias Safe Operating Area
Ω
400
40
500
Fig. 8. Gate Charge
Q
600
G
60
- NanoCoulombs
V
IXYH50N120C3
CE
700
- Volts
80
0.1
800
100
900
1000
120
1100
140
1200
1