IXYN82N120C3H1 IXYS, IXYN82N120C3H1 Datasheet - Page 4
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IXYN82N120C3H1
Manufacturer Part Number
IXYN82N120C3H1
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXYN82N120C3H1.pdf
(7 pages)
Specifications of IXYN82N120C3H1
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
105
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
46
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.2
Tfi, Typ, Tj = 25°c, Igbt, (ns)
93
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.70
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
42
Rthjc, Max, Diode (k/w)
0.42
Package Style
SOT-227B
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
10
0.1
80
70
60
50
40
30
20
10
0.00001
0
1
0
0
f
= 1 MHz
20
5
10
40
Fig. 7. Transconductance
Fig. 9. Capacitance
0.0001
15
60
I
V
C
CE
- Amperes
20
- Volts
80
100
25
Fig. 11. Maximum Transient Thermal Impedance
T
0.001
J
120
30
= - 40ºC
25ºC
125ºC
C ies
C oes
C res
140
35
Pulse Width - Seconds
160
40
0.01
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
200
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
300
CE
20
J
G
= 82A
= 10mA
= 125ºC
= 2
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
40
400
60
0.1
500
Fig. 8. Gate Charge
80
IXYN82N120C3H1
Q
600
G
- NanoCoulombs
V
100
CE
700
- Volts
120
800
140
1
900
160
1000
180
1100
200
1200
220
10