IXYR100N120C3 IXYS, IXYR100N120C3 Datasheet

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IXYR100N120C3

Manufacturer Part Number
IXYR100N120C3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYR100N120C3

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
104
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
58
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
110
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.55
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.32
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
ISOPLUS247
1200V XPT
GenX3
(Electrically Isolated Tab)
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
V
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 100A, V
= 250μA, V
TM
CES
, V
IGBT
GE
VJ
GE
= ±20V
GE
= 150°C, R
= 0V
CE
GE
= 15V, Note 1
= V
= 0V
GE
GE
= 1MΩ
G
= 1Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXYR100N120C3
1200
Min.
Characteristic Values
20..120/4.5..27
3.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
Typ.
= 200
2.9
4.1
2500
1200
1200
104
±20
±30
480
V
300
260
470
175
1.2
58
50
CES
5
±100
Max.
1.25 mA
5.0
3.5
25
N/lb.
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
J
V
I
V
t
ISOPLUS247
Features
Advantages
Applications
G = Gate
E = Emitter
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
= 1200V
= 58A
= 110ns
≤ ≤ ≤ ≤ ≤ 3.5V
E
TM
C
= Collector
Isolated Tab
DS100406(10/11)

Related parts for IXYR100N120C3

IXYR100N120C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 100A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYR100N120C3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 104 58 480 50 1.2 = 1Ω 200 G CM ≤ CES 470 -55 ...

Page 2

... T CE 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYR100N120C3 ISOPLUS247 (IXYR) Outline Max 5. 0.32 °C/W °C Gate 2,4 - Collector 3 - Emiiter or R ...

Page 3

... T = 25ºC 180 J 160 140 = 200A 120 C 100 100A 50A IXYR100N120C3 Fig. 2. Extended Output Characteristics @ T 11V V = 15V GE 13V 12V 10V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2 200A C 1.8 1.6 1 ...

Page 4

... C ies 160 140 120 100 C oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXYR100N120C3 Fig. 8. Gate Charge V = 600V 100A 10mA 120 160 200 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150ºC J Ω ...

Page 5

... 100 125 170 220 150 200 130 180 110 160 90 140 70 120 100 100 IXYR100N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º 25º ...

Page 6

... 100 125 IXYR100N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 125º 600V Amperes C 33 ...

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