IXA70I1200NA IXYS, IXA70I1200NA Datasheet

no-image

IXA70I1200NA

Manufacturer Part Number
IXA70I1200NA
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXA70I1200NA.pdf (6 pages)

Specifications of IXA70I1200NA

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
100
Ic90, Tc = 90°c, Igbt, (a)
65
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
100
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.35
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
SOT-227B
XPT IGBT
Single IGBT
Part number
IXA70I1200NA
● Easy paralleling due to the positive temperature
● Rugged XPT design (Xtreme light Punch Through)
● Thin wafer technology combined with the XPT design
I
P
I
I
V
t
t
t
t
E
E
RBSOA
SCSOA
t
I
R
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Symbol
V
V
I
V
Features / Advantages:
IGBT
C25
C
GES
SC
SC
CES
d(on)
d(off)
r
f
CES
GES
tot
CE(sat)
GE(th)
on
off
coefficient of the on-state voltage
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
results in a competitive low VCE(sat)
90
thJC
Gon
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
Gate emitter leakage current
Collector emitter saturation voltage
Gate emitter threshold voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on energy per pulse
Turn-off energy per pulse
Reverse bias safe operation area
Short circuit safe operation area
Short circuit duration
Short circuit current
Thermal resistance juntion to case
V = V
V
I =
I =
V
V
V
R =
Conditions
V
Inductive load
V
V
V
C
C
GE
CE
CE
CE
GE
CEK
CE
CE
GE
G
= 0 V; V = ±20 V
=
=
= ±15 V; R =
=
=
= 0 V
55
=
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
● Inductive heating, cookers
600
600
1200
900
Data according to IEC 60747and per diode unless otherwise specified
CES
2
15
power supplies
A; V =
15
mA; V
Ω
V; V
V; I =
; V = 0 V
V;
V; V = ±15 V
GE
GE
; non-repetitive
V
GE
C
GE
GE
G
R =
GE
15
G
=
= V
50
15
15
V
A
CE
15
Ω
V; I =
Ω
(G) 2
C
50
(E) 1+4
(C) 3
A
T
T
T
T
T
T
T
T
T
T
T
T
C
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
= 25°C
= 25°C
= 25°C
=
= 25°C
= 25°C
=
= 25°C
=
=
= 125°C
= 125°C
125
125
125
90
● Housing: SOT-227B (minibloc)
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
I
V
V
Package:
°C
°C
°C
°C
C25
CES
CE(sat)typ
IXA70I1200NA
min.
5.4
R a t i n g s
=
=
=
typ.
190
250
100
0.1
1.8
2.1
4.5
5.5
70
40
6
1200
max.
100
preliminary
1200
1.8 V
0.35
100
350
500
150
200
±20
0.1
2.1
6.5
65
10
20110824b
A
V
Unit
K/W
mA
mA
mJ
mJ
nC
nA
µs
ns
ns
ns
ns
W
V
V
A
A
V
V
V
A
A

Related parts for IXA70I1200NA

Image
Part Number
Description
Manufacturer
Datasheet
Request R
IXFN61N50
Part Number:
IXFN61N50
Description:
Manufacturer:
IXYS
Datasheet:
IXFN61N50.pdf (2 pages)
MDD44-12N1
Part Number:
MDD44-12N1
Description:
Manufacturer:
IXYS
Datasheet:
MDD44-12N1.pdf (3 pages)
MDD44-12
Part Number:
MDD44-12
Description:
Manufacturer:
IXYS
Datasheet:
MDD44-12N1.pdf (3 pages)
MCC60-16io1B
Part Number:
MCC60-16io1B
Description:
Manufacturer:
IXYS
Datasheet:
MCC60-16IO1B.pdf (2 pages)
IXFN200N06
Part Number:
IXFN200N06
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
IXFN200N06.pdf (2 pages)
74F112DC
Part Number:
74F112DC
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
74F112DC.pdf (3 pages)
IXFN24N100
Part Number:
IXFN24N100
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
IXFN24N100.pdf (2 pages)
VUM85-05A
Part Number:
VUM85-05A
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
VUM85-05A.pdf (3 pages)
MCD26-16IO1B
Part Number:
MCD26-16IO1B
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
MCD26-16IO1B.pdf (4 pages)
MCD26-16IO8B
Part Number:
MCD26-16IO8B
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
MCD26-16IO1B.pdf (4 pages)
MCD44-16IO1B
Part Number:
MCD44-16IO1B
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
MCC44-08IO1B.pdf (4 pages)
MCD44-16IO8B
Part Number:
MCD44-16IO8B
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
MCC44-08IO1B.pdf (4 pages)
MCD56-16IO1B
Part Number:
MCD56-16IO1B
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
MCC56-08IO1B.pdf (4 pages)
MCD56-16IO8B
Part Number:
MCD56-16IO8B
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
MCC56-08IO1B.pdf (4 pages)
MCD72-16IO1B
Part Number:
MCD72-16IO1B
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
MCD72-16IO1B.pdf (4 pages)

IXA70I1200NA Summary of contents

Page 1

... V = 1200 V CEK V = 900 ± Ω non-repetitive G Data according to IEC 60747and per diode unless otherwise specified IXA70I1200NA preliminary I = 100 A C25 1200 CES V 1 CE(sat)typ Package: ● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ● ...

Page 2

... IXYS all rights reserved Conditions T = 25° ° / A/µ Data according to IEC 60747and per diode unless otherwise specified IXA70I1200NA preliminary Ratings min. typ. max. n/a n 25°C n 125 °C n/a VJ n/a n 125 °C ...

Page 3

... IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Conditions second minute Marking on Product Delivery Mode IXA70I1200NA Tube Data according to IEC 60747and per diode unless otherwise specified IXA70I1200NA preliminary Ratings min. typ. max. Unit -55 150 -40 150 0 ...

Page 4

... IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified IXA70I1200NA preliminary 20110824b ...

Page 5

... Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved = 125° off 100 120 Data according to IEC 60747and per diode unless otherwise specified IXA70I1200NA 100 125°C VJ ...

Page 6

... Z 0.1 thJC [K/W] 0.01 0.001 0.01 0.1 t [s] p Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 1 10 Data according to IEC 60747and per diode unless otherwise specified IXA70I1200NA preliminary 20110824b ...

Related keywords