IXYH40N120B3 IXYS, IXYH40N120B3 Datasheet - Page 4
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IXYH40N120B3
Manufacturer Part Number
IXYH40N120B3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXYH40N120B3.pdf
(6 pages)
Specifications of IXYH40N120B3
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
96
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
40
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.7
Tfi, Typ, Tj = 25°c, Igbt, (ns)
183
Eoff, Typ, Tj = 125°c, Igbt (mj)
2.05
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.26
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
30
25
20
15
10
10
0.1
5
0
0.00001
1
0
0
T
J
= - 40ºC
f
25ºC
10
= 1 MHz
5
20
150ºC
10
30
Fig. 7. Transconductance
Fig. 9. Capacitance
15
40
0.0001
I
V
C
CE
- Amperes
50
- Volts
20
60
25
Fig. 11. Maximum Transient Thermal Impedance
70
30
80
C oes
C ies
C res
0.001
35
90
Pulse Width - Second
100
40
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
J
G
V
I
I
300
C
G
= 150ºC
CE
= 10
0.01
10
= 80A
= 10mA
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
400
20
500
30
Fig. 8. Gate Charge
600
Q
G
- NanoCoulombs
V
40
700
IXYH40N120B3
CE
- Volts
800
0.1
50
900
60
1000
70
1100
80
1200
1300
90
1