IXYH40N120B3D1 IXYS, IXYH40N120B3D1 Datasheet - Page 4

• Manufacturer Part Number: IXYH40N120B3D1
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYH40N120B3D1

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 86
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 40
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.7
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 183
• Eoff, Typ, Tj = 125°c, Igbt (mj): 2.05
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.26
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 25
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
30
25
20
15
10
10
0.1
5
0
0.00001
1
0
0
T
J
= - 40ºC
f
25ºC
10
= 1 MHz
5
20
150ºC
10
30
Fig. 7. Transconductance
Fig. 9. Capacitance
15
40
0.0001
I
V
C
CE
- Amperes
50
- Volts
20
60
25
Fig. 11. Maximum Transient Thermal Impedance
70
30
80
C oes
C ies
C res
0.001
35
90
Pulse Width - Second
100
40
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
J
G
V
I
I
300
C
G
= 150ºC
CE
= 10
0.01
10
= 80A
= 10mA
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
400
20
500
30
Fig. 8. Gate Charge
600
IXYH40N120B3D1
Q
G
- NanoCoulombs
V
40
700
CE
- Volts
800
0.1
50
900
60
1000
70
1100
80
1200
1300
90
1