IXA45IF1200HB IXYS, IXA45IF1200HB Datasheet - Page 2
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IXA45IF1200HB
Manufacturer Part Number
IXA45IF1200HB
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXA45IF1200HB.pdf
(6 pages)
Specifications of IXA45IF1200HB
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
78
Ic90, Tc = 90°c, Igbt, (a)
45
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
100
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
4.1
Rthjc, Max, Igbt (c/w)
0.38
If, Tc = 90°c, Diode (a)
33
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
0.70
Package Style
TO-247
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXA45IF1200HB
Manufacturer:
FSC
Quantity:
12 000
Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Diode
F25
F
RM
rr
Equivalent Circuits for Simulation
1
2
3
4
rec(off)
thJC
100
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
Conditions
T = 25°C
T =
I =
V =
di /dt = -
I =
C4
F
F
C
C
R
F
100
30
30
600
Data according to IEC 60747and per diode unless otherwise specified
A
A
°C
V
600
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA45IF1200HB
min.
min.
0.07
0.113
0.055
0.142
0.0006
0.2
0.006
0.05
IGBT
Ratings
Ratings
typ.
typ.
1.95
1.95
350
3.5
0.9
30
max.
max.
1.25
28.3
0.16
0.12
0.15
0.27
0.0005
0.004
0.02
0.15
2.2
0.7
1.1
Diode
60
33
39
20100702b
Unit
K/W
Unit
m
m
µC
mJ
ns
Ω
Ω
A
A
V
V
A
V
V