IXA33IF1200HB IXYS, IXA33IF1200HB Datasheet - Page 5

• Manufacturer Part Number: IXA33IF1200HB
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXA33IF1200HB

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 58
• Ic90, Tc = 90°c, Igbt, (a): 34
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 100
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 3.0
• Rthjc, Max, Igbt (c/w): 0.50
• If, Tc = 90°c, Diode (a): 33
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): 0.70
• Package Style: TO-247

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
50
40
30
20
10
50
40
30
20
10
0
0
6
5
4
3
2
1
0
0
5
0
Fig. 3 Typ. tranfer characteristics
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
G
CE
GE
6
T
= 15 V
=
= 125°C
= 600 V
= ±15 V
VJ
10
= 125°C
39
7
1
T
VJ
8
= 25°C
20
V
T
V
CE
I
VJ
GE
C
= 25°C
9
[V]
[A]
[V]
2
30
10 11 12 13
T
VJ
= 125°C
40
3
E
E
off
on
50
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
V
[V]
E
[A]
GE
I
C
50
40
30
20
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
4
3
2
1
0
5
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
I
V
V
T
T
40
C
VJ
VJ
CE
GE
I
V
=
C
= 125°C
CE
= 125°C
= 600 V
= ±15 V
20
= 25 A
= 600 V
1
25 A
60
V
GE
IXA33IF1200HB
= 15 V
17 V
19 V
40
80
2
V
R
Q
CE
G
G
[ ]
[V]
[nC]
100
60
3
120
13 V
80
4
140
20100702b
11 V
E
E
9 V
on
off
100
5