IXA4IF1200UC IXYS, IXA4IF1200UC Datasheet - Page 2

• Manufacturer Part Number: IXA4IF1200UC
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXA4IF1200UC

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 9
• Ic90, Tc = 90°c, Igbt, (a): 4
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1,8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 100
• Eoff, Typ, Tj = 125°c, Igbt (mj): 0.30
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 2.70
• If, Tc = 90°c, Diode (a): 6
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): 3.00
• Package Style: TO-252AA

Symbol
I
I
V
Q
I
t
E
R
Symbol
V
R
V
R
R
R
R
R
τ
τ
τ
τ
IXYS reserves the right to change limits, conditions and dimensions.
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Diode
Equivalent Circuits for Simulation
F25
F
RM
rr
1
2
3
4
rec(off)
thJC
100
F
0
0
0
0
1
2
3
4
rr
I
V
R1
0
C1
Definition
Forward current
Forward voltage
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Definition
IGBT
Diode
R
0
R2
C2
R3
C3
R4
T = 25°C
T =
V =
di /dt = -
I =
Conditions
I =
C4
F
F
C
C
R
F
100
600
3
Data according to IEC 60747and per diode unless otherwise specified
3
A
A
°C
V
150
A/µs;
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
= 25°C
=
=
=
=
125
125
150
150
°C
°C
°C
°C
IXA4IF1200UC
min.
min.
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
IGBT
Ratings
Ratings
typ.
typ.
350
1.9
1.9
0.5
0.1
5
max.
max.
preliminary
1.25
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
460
280
2.2
1.1
Diode
10
6
3
20111109a
Unit
Unit
K/W
m
m
mJ
µC
ns
Ω
Ω
A
A
V
V
A
V
V