IXYH60N90C3 IXYS, IXYH60N90C3 Datasheet

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IXYH60N90C3

Manufacturer Part Number
IXYH60N90C3
Description
XPT 900V
Manufacturer
IXYS
Datasheet

Specifications of IXYH60N90C3

Vces, (v)
900
Ic25, Tc = 25°c, Igbt, (a)
140
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
60
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.7
Tfi, Typ, Tj = 25°c, Igbt, (ns)
88
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.15
Rthjc, Max, Igbt (c/w)
0.20
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-247
900V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
TM
= 250μA, V
= V
= 0V, V
= 60A, V
= 250μA, V
CES
IGBT
, V
GE
VJ
GE
GE
= ±20V
= 150°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
= 1MΩ
G
= 3Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXYH60N90C3
Min.
950
Characteristic Values
3.5
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
Typ.
2.9
= 120
2.4
140
±20
±30
310
V
750
175
300
260
900
900
60
CES
6
±100
Max.
750
Nm/lb.in.
2.7
5.5
25
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
E
= 900V
= 60A
= 88ns
≤ ≤ ≤ ≤ ≤ 2.7V
C
Tab = Collector
Tab
= Collector
DS100452(03/12)

Related parts for IXYH60N90C3

IXYH60N90C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 60A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYH60N90C3 Maximum Ratings 900 = 1MΩ 900 GE ±20 ±30 140 60 310 = 3Ω 120 G CM ≤ CES 750 -55 ...

Page 2

... CES 2.70 Ω 1. 4.70 Ω 103 165 2.15 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYH60N90C3 TO-247 (IXYH) Outline Max Terminals Gate 3 - Emitter mJ Dim. Millimeter ns Min. Max 4.7 A 2.2 2. 2.2 ...

Page 3

... T = 25ºC 180 J 160 140 120 100 I = 120A 60A 40 20 30A IXYH60N90C3 Fig. 2. Extended Output Characteristics @ 15V GE 14V 13V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 120A 60A 30A ...

Page 4

... C ies 100 80 C oes res Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXYH60N90C3 Fig. 8. Gate Charge V = 450V 60A 10mA NanoCoulombs G Fig ...

Page 5

... T = 150ºC J 125 120 90 100 T = 25º IXYH60N90C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 450V 150º ...

Page 6

... I = 30A 100 125 150 IXYH60N90C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 450V 25ºC, 150º Amperes C 42 ...

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