IXYH40N90C3D1 IXYS, IXYH40N90C3D1 Datasheet - Page 4
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IXYH40N90C3D1
Manufacturer Part Number
IXYH40N90C3D1
Description
XPT 900V
Manufacturer
IXYS
Datasheet
1.IXYH40N90C3D1.pdf
(7 pages)
Specifications of IXYH40N90C3D1
Vces, (v)
900
Ic25, Tc = 25°c, Igbt, (a)
90
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
40
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
110
Eoff, Typ, Tj = 125°c, Igbt (mj)
1.2
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
25
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.01
100
0.1
40
35
30
25
20
15
10
10
0.00001
5
0
1
0
0
f
10
= 1 MHz
5
20
10
30
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
40
15
I
C
V
50
- Amperes
CE
- Volts
20
60
25
70
C oes
C res
C ies
T
J
Fig. 11. Maximum Transient Thermal Impedance
= - 40ºC
0.001
80
25ºC
150ºC
30
90
35
100
Pulse Width - Seconds
110
40
0.01
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
200
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
CE
= 125ºC
= 5
= 40A
= 10mA
300
= 450V
10
Ω
Fig. 10. Reverse-Bias Safe Operating Area
0.1
400
20
Fig. 8. Gate Charge
Q
500
G
30
- NanoCoulombs
IXYH40N90C3D1
V
CE
- Volts
600
40
1
700
50
800
60
900
70
10