IXYH24N90C3D1 IXYS, IXYH24N90C3D1 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXYH24N90C3D1
Manufacturer Part Number
IXYH24N90C3D1
Description
XPT 900V
Manufacturer
IXYS
Datasheet
1.IXYH24N90C3D1.pdf
(7 pages)
Specifications of IXYH24N90C3D1
Vces, (v)
900
Ic25, Tc = 25°c, Igbt, (a)
44
Ic90, Tc = 90°c, Igbt, (a)
24
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.7
Tfi, Typ, Tj = 25°c, Igbt, (ns)
90
Eoff, Typ, Tj = 125°c, Igbt (mj)
0.55
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.62
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
15
Rthjc, Max, Diode (k/w)
1.6
Package Style
TO-247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
0.01
100
0.1
22
20
18
16
14
12
10
10
0.00001
8
6
4
2
0
1
0
0
f
= 1 MHz
5
10
10
Fig. 7. Transconductance
20
0.0001
Fig. 9. Capacitance
15
I
C
V
CE
- Amperes
30
- Volts
20
T
J
= - 40ºC, 25ºC, 125ºC
25
C ies
C oes
C res
40
Fig. 11. Maximum Transient Thermal Impedance
0.001
30
50
35
Pulse Width - Seconds
60
40
0.01
50
40
30
20
10
16
14
12
10
8
6
4
2
0
0
200
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
CE
= 125ºC
= 10
= 24A
= 10mA
5
300
= 450V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
10
0.1
400
15
Fig. 8. Gate Charge
Q
500
G
IXYH24N90C3D1
- NanoCoulombs
V
20
CE
- Volts
600
25
1
700
30
35
800
40
900
10
45