IXYP8N90C3 IXYS, IXYP8N90C3 Datasheet

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IXYP8N90C3

Manufacturer Part Number
IXYP8N90C3
Description
XPT 900V
Manufacturer
IXYS
Datasheet

Specifications of IXYP8N90C3

Vces, (v)
900
Ic25, Tc = 25°c, Igbt, (a)
20
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
8
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.5
Tfi, Typ, Tj = 25°c, Igbt, (ns)
130
Eoff, Typ, Tj = 125°c, Igbt (mj)
0.22
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
1.2
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-220
900V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-220
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
= 110°C
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 25°C
= 15V, T
TM
= 250μA, V
= V
= 0V, V
= 8A, V
= 250μA, V
CES
IGBTs
, V
GE
GE
VJ
GE
= ±20V
= 15V, Note 1
= 150°C, R
= 0V
CE
GE
= V
= 0V
GE
GE
= 1MΩ
G
= 30Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXYY8N90C3
IXYP8N90C3
Min.
950
Characteristic Values
3.5
@V
-55 ... +175
-55 ... +175
Maximum Ratings
CE
I
1.13/10
CM
2.15
2.75
Typ.
0.35
3.00
= 16
±20
±30
V
120
175
300
260
900
900
48
15
20
CES
4
8
±100
Max.
2.50
400
Nm/lb.in.
6.0
60
mJ
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
V
V
V
A
g
g
TO-252 (IXYY)
V
I
V
t
Features
Advantages
Applications
G = Gate
E = Emitter
TO-220 (IXYP)
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Avalanche Rated
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C E
= 900V
= 8A
= 130ns
≤ ≤ ≤ ≤ ≤ 2.5V
G
E
C
Tab = Collector
C (Tab)
= Collector
C (Tab)
DS100399(10/11)

Related parts for IXYP8N90C3

IXYP8N90C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 8A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYY8N90C3 IXYP8N90C3 Maximum Ratings 900 = 1MΩ 900 GE ±20 ± 30Ω ≤ ...

Page 2

... J 7.5 /dt = 200A/μ 100° 100°C 114 J (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYY8N90C3 IXYP8N90C3 TO-252 AA Outline Max Dim. Millimeter Min. Max 2.19 2. 0.89 1.14 0.50 ...

Page 3

... Fig. 4. Dependence of V Junction Temperature V = 15V 16A -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 150ºC J 25ºC 3.5 4.5 5.5 6.5 7.5 8 Volts GE IXYY8N90C3 IXYP8N90C3 = 25º 15V GE 13V 12V 11V 10V CE(sat 100 125 150 175 - 40ºC 9.5 10.5 11.5 ...

Page 4

... Pulse Width - Seconds Fig. 8. Gate Charge V = 450V 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º Ω < 10V / ns 200 300 400 500 600 V - Volts CE 0.1 1 IXYY8N90C3 IXYP8N90C3 700 800 900 10 ...

Page 5

... Ohms G Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature d(on) Ω 15V 450V 16A Degrees Centigrade J IXYY8N90C3 IXYP8N90C3 2.4 2 1.6 1.2 0.8 0 280 240 200 160 120 240 270 300 110 100 ...

Page 6

... 210 240 270 300 18.5 18.0 17.5 17.0 16.5 16.0 15.5 15.0 100 125 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 450V 125º 25º Amperes C IXYY8N90C3 IXYP8N90C3 18.5 18.0 17.5 17.0 16.5 16.0 15.5 15 IXYS REF: IXY_8N90C3(1D) 10-20-11 ...

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