IXXX200N60C3 IXYS, IXXX200N60C3 Datasheet - Page 4

• Manufacturer Part Number: IXXX200N60C3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXX200N60C3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 340
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 200
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.1
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 80
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.1
• Rthjc, Max, Igbt (c/w): 0.092
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
1000
110
100
100
100
0.1
10
90
80
70
60
50
40
30
20
10
0
1
0
1
0
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
20
J
C
= 175ºC
= 25ºC
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
External Lead Limit
40
10
Fig. 7. Transconductance
60
10
Fig. 9. Capacitance
15
80
V
C ies
C oes
C res
DS
I
V
C
T
CE
- Amperes
- Volts
J
100
= - 40ºC, 25ºC, 150ºC
- Volts
20
120
25
100
140
30
160
35
180
25µs
100µs
1ms
10ms
DC
1000
200
40
0.0001
0.001
400
300
200
100
0.01
16
14
12
10
0.1
8
6
4
2
0
0
0.00001
100
0
Fig. 12. Maximum Transient Thermal Impedance
T
R
dv / dt < 10V / ns
V
I
I
C
G
J
CE
G
= 150ºC
= 200A
= 10mA
= 1
= 300V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
50
0.0001
200
100
0.001
Fig. 8. Gate Charge
300
Pulse Width - Seconds
Q
G
- NanoCoulombs
V
CE
150
0.01
- Volts
400
IXXK200N60C3
IXXX200N60C3
200
0.1
500
250
1
600
300
10