IXXX100N60B3H1 IXYS, IXXX100N60B3H1 Datasheet
IXXX100N60B3H1
Specifications of IXXX100N60B3H1
Related parts for IXXX100N60B3H1
IXXX100N60B3H1 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 70A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXXK100N60B3H1 IXXX100N60B3H1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 200 160 100 65 440 50 600 = 2Ω 200 G CM ≤ CES = 150° ...
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... Min. Typ. 1 150°C 1 100°C J 140 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXK100N60B3H1 IXXX100N60B3H1 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 2 0.18 °C/W ° ...
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... J = 15V GE 13V 11V 12V 10V 2 25º IXXK100N60B3H1 IXXX100N60B3H1 Fig. 2. Extended Output Characteristics @ 15V 14V GE 13V Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V 140A 1.6 C 1.4 1 70A C 1 ...
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... C oes 100 res 100 1 0.1 25µs 100µs 0.01 1ms 10ms DC 0.001 100 1000 0.00001 IXXK100N60B3H1 IXXX100N60B3H1 Fig. 8. Gate Charge V = 300V 70A 10mA 100 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150ºC J Ω < ...
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... V = 15V G GE 240 V = 360V CE 240 220 200 200 180 160 160 120 140 80 120 40 100 100 IXXK100N60B3H1 IXXX100N60B3H1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 360V 150º ...
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... 50A 100 125 150 IXXK100N60B3H1 IXXX100N60B3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 360V 150ºC, 25º ...
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... Fig. 26 Maximum transient thermal impedance junction to case (for diode) © 2011 IXYS CORPORATION, All Rights Reserved Fig. 23. Reverse Recovery Charge Q F Versus -di / Fig. 26. Recovery Time -di /dt F 0.01 Seconds Pulse Width [ms] IXXK100N60B3H1 IXXX100N60B3H1 Fig. 24. Peak Reverse Current I r Versus -di Versus IXYS REF: IXX_100N60B3(7D)12-01-11-B ...