IXXN100N60B3H1 IXYS, IXXN100N60B3H1 Datasheet - Page 4

• Manufacturer Part Number: IXXN100N60B3H1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXN100N60B3H1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 170
• Ic90, Tc = 90°c, Igbt, (a): 100
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.80
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 150
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.8
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 50
• Rthjc, Max, Diode (k/w): 0.42
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1000
100
100
0.1
80
70
60
50
40
30
20
10
10
10
0
1
1
0
0
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
20
= 150ºC
= 25ºC
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
40
10
60
Fig. 7. Transconductance
10
Fig. 9. Capacitance
15
V
80
DS
I
V
C
- Volts
CE
- Amperes
100
20
- Volts
120
25
100
C oes
C res
C ies
140
T
30
J
= - 40ºC
160
DC
25ºC
150ºC
35
180
25µs
100µs
1ms
10ms
100ms
1000
200
40
0.001
220
200
180
160
140
120
100
0.01
80
60
40
20
16
14
12
10
0.1
0.00001
0
8
6
4
2
0
1
100
0
Fig. 12. Maximum Transient Thermal Impedance
T
R
dv / dt < 10V / ns
V
I
I
150
J
G
C
G
CE
= 150ºC
= 2
= 70A
= 10mA
= 300V
20
0.0001
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
250
40
0.001
Fig. 8. Gate Charge
300
Pulse Width - Seconds
IXXN100N60B3H1
Q
G
60
- NanoCoulombs
V
350
CE
0.01
- Volts
80
400
450
0.1
100
500
120
550
1
600
140
10
650