IXXX100N60C3H1 IXYS, IXXX100N60C3H1 Datasheet - Page 7
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IXXX100N60C3H1
Manufacturer Part Number
IXXX100N60C3H1
Description
XPT 600V
Manufacturer
IXYS
Datasheet
1.IXXX100N60C3H1.pdf
(7 pages)
Specifications of IXXX100N60C3H1
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
170
Ic90, Tc = 90°c, Igbt, (a)
100
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.2
Tfi, Typ, Tj = 25°c, Igbt, (ns)
75
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
1.4
Rthjc, Max, Igbt (c/w)
0.18
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
65
Rthjc, Max, Diode (k/w)
0.30
Package Style
PLUS247
© 2011 IXYS CORPORATION, All Rights Reserved
Fig. 26 Maximum transient thermal impedance junction to case (for diode)
Fig. 25. Dynamic Parameters Q
1.00
0.10
0.01
Fig. 22. Forward Current I
27.
0.0001
Versus T
VJ
0.001
F
Versus V
r
, I
RM
F
Fig. 23. Reverse Recovery Charge Q
Versus -di
Fig. 26. Recovery Time t
0.01
Pulse Width [ms]
-di
F
/dt
F
/dt
Seconds
rr
Versus
0.1
r
Fig. 24. Peak Reverse Current I
1
Versus -di
IXXK100N60C3H1
IXXX100N60C3H1
F
/dt
IXYS REF: IXX_100N60C3(7D)9-30-10-A
10
RM