IXXH75N60B3 IXYS, IXXH75N60B3 Datasheet - Page 4

• Manufacturer Part Number: IXXH75N60B3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH75N60B3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 75
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.85
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 125
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.2
• Rthjc, Max, Igbt (c/w): 0.20
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
60
50
40
30
20
10
10
0.1
0.4
0.00001
0
1
0
0
f
= 1 MHz
5
25
10
Fig. 7. Transconductance
50
0.0001
Fig. 9. Capacitance
15
I
C
V
CE
- Amperes
T
J
75
- Volts
20
= - 40ºC, 25ºC, 150ºC
25
100
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
C ies
Fig. 11. Maximum Transient Thermal Impedance
0.001
30
125
35
Pulse Width - Seconds
150
40
aasss
0.01
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
10
CE
J
G
= 75A
= 10mA
= 150ºC
= 5
= 300V
Ω
Fig. 10. Reverse-Bias Safe Operating Area
20
200
0.1
30
Fig. 8. Gate Charge
300
40
Q
G
- NanoCoulombs
V
50
CE
IXXH75N60B3
- Volts
400
60
1
70
500
80
90
100
600
10
110