IXXH75N60B3D1 IXYS, IXXH75N60B3D1 Datasheet - Page 7
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IXXH75N60B3D1
Manufacturer Part Number
IXXH75N60B3D1
Description
XPT 600V
Manufacturer
IXYS
Datasheet
1.IXXH75N60B3D1.pdf
(7 pages)
Specifications of IXXH75N60B3D1
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
160
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
75
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.85
Tfi, Typ, Tj = 25°c, Igbt, (ns)
125
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.2
Rthjc, Max, Igbt (c/w)
0.20
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
30
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXXH75N60B3D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Fig. 21. Forward Current I
Fig. 24. Dynamic Parameters Q
Z
Fig. 27. Transient Thermal Resistance Junction to Case
© 2011 IXYS CORPORATION, All Rights Reserved
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
Versus T
VJ
=150°C
=100°C
40
I
1
RM
VJ
0.0001
Q
80
r
2
T
F
VJ
V
T
Versus V
120
VJ
F
= 25°C
r
, I
3
°C
0.001
RM
V
160
F
t
Q
rr
1000
r
800
600
400
200
Fig. 25. Recovery Time t
nC
Fig. 22. Reverse Recovery Charge Q
Versus -di
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
-di
F
/dt
F
I
I
I
/dt
F
F
F
= 60A
= 30A
= 15A
I
I
I
400
F
F
F
= 60A
= 30A
= 15A
0.1
T
V
-di
VJ
R
600
F
-di
= 100°C
/dt
= 300V
t
F
rr
/dt
A/μs
Versus
s
800
A/μs
DSEP 29-06
1000
1000
1
r
I
V
RM
FR
30
25
20
15
10
20
15
10
A
V
5
0
5
0
Fig. 26. Peak Forward Voltage V
Constants for Z
Fig. 23. Peak Reverse Current I
0
0
IXXH75N60B3D1
1
2
3
i
T
V
VJ
R
200
200
= 100°C
= 300V
t
fr
and t
Versus -di
T
I
F
VJ
I
I
I
F
F
F
400
400
R
0.502
0.193
0.205
= 30A
= 100°C
= 60A
= 30A
= 15A
fr
thi
V
Versus di
thJC
FR
(K/W)
600
600
calculation:
F
di
-di
/dt
F
/dt
F
/dt
IXYS REF: IXX_75N60B3(71)05-03-11
F
A/μs
A/μs
800
800
/dt
t
0.0052
0.0003
0.0162
i
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
μs
t
fr