IXXH75N60C3D1 IXYS, IXXH75N60C3D1 Datasheet - Page 2

• Manufacturer Part Number: IXXH75N60C3D1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH75N60C3D1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 150
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 75
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 75
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.07
• Rthjc, Max, Igbt (c/w): 0.20
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol Test Conditions
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
F
ie
oes
res
on
of
on
off
thJC
thCS
thJC
g(on)
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
V
I
I
F
F
F
R
= 24A, V
= 30A, V
= 100V
= 1A, V
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
C
C
C
C
CE
CE
CE
= 75A, V
= 60A, V
= 60A, V
= 60A, V
PRELIMINARY TECHNICAL INFORMATION
= 25V, V
= 400V, R
= 400V, R
GE
GE
GE
= 0V, -di
= 0V, -di
= 0V, Note 1
GE
GE
GE
CE
GE
= 15V, V
= 15V
= 15V
= 10V, Note 1
G
G
= 0V, f = 1MHz
= 5
= 5
F
4,835,592
4,881,106
F
/dt = 100A/μs, V
/dt = 100A/μs,
J
J
Ω
Ω
= 25°C
= 150°C
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
R
CES
= 30V
5,049,961
5,063,307
5,187,117
T
T
T
J
J
J
= 150°C
Characteristic Values
= 100°C
= 100°C
20
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
3300
1.60
2.50
1.07
0.21
Typ.
195
107
0.80
105
33
63
28
46
35
75
90
75
33
72
80
CE
Typ.
1.6
100
(clamp), T
25
Max.
0.20 °C/W
130
1.40 mJ
6,404,065 B1
6,534,343
6,583,505
0.9 °C/W
Max.
2.7
4
J
°C/W
or R
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXXH) Outline
IXXH75N60C3D1
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
3 - Emitter
1
.4
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Collector
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216