IXXH75N60C3 IXYS, IXXH75N60C3 Datasheet - Page 4

• Manufacturer Part Number: IXXH75N60C3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH75N60C3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 150
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 75
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 75
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.07
• Rthjc, Max, Igbt (c/w): 0.20
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
10,000
0.01
1,000
0.1
0.4
0.00001
100
1
10
50
40
30
20
10
0
0
0
f
= 1 MHz
5
20
10
Fig. 7. Transconductance
0.0001
40
Fig. 9. Capacitance
15
T
I
V
C
J
CE
- Amperes
= - 40ºC, 25ºC, 150ºC
- Volts
60
20
25
Fig. 11. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
80
C ies
C oes
C res
0.001
30
100
35
Pulse Width - Seconds
120
40
aasss
0.01
160
140
120
100
16
14
12
10
80
60
40
20
0
8
6
4
2
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
C
G
J
G
CE
10
= 150ºC
= 75A
= 10mA
= 5
= 300V
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
20
0.1
30
Fig. 8. Gate Charge
40
300
Q
G
- NanoCoulombs
V
50
CE
IXXH75N60C3
- Volts
60
400
1
70
80
500
90
100
600
110
10