IXXR100N60B3H1 IXYS, IXXR100N60B3H1 Datasheet

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IXXR100N60B3H1

Manufacturer Part Number
IXXR100N60B3H1
Description
XPT 600V
Manufacturer
IXYS
Datasheet

Specifications of IXXR100N60B3H1

Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
145
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
68
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.80
Tfi, Typ, Tj = 25°c, Igbt, (ns)
150
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.8
Rthjc, Max, Igbt (c/w)
0.31
If, Tc = 90°c, Diode (a)
54
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
0.62
Package Style
ISOPLUS247
XPT
GenX3
(Electrically Isolated Tab)
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F90
CM
A
CES
GES
sc
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
TM
600V
TM
Clamped Inductive Load
T
T
Continuous
Transient
T
T
T
T
T
T
V
V
R
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Test Conditions
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
C
GE
GE
CE
CE
G
= 25°C
w/ Diode
= 25°C to 150°C
= 25°C to 150°C, R
= 110°C
= 90°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, V
= 10Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 70A, V
= 250μA, V
CES
, V
GE
CE
VJ
GE
GE
= ±20V
= 360V, T
= 150°C, R
= 0V
CE
= 15V, Note 1
GE
= 0V
= V
GE
GE
J
= 1MΩ
G
= 150°C
= 2Ω
Advance Technical Information
T
T
J
J
= 150°C
= 125°C
IXXR100N60B3H1
Min.
600
20..120/4.5..27
3.0
Characteristic Values
@V
-55 ... +150
-55 ... +150
Maximum Ratings
CE
I
CM
1.77
Typ.
1.50
= 200
2500
V
145
600
±20
±30
440
300
260
400
150
600
600
CES
10
68
54
50
5
Max.
±100
1.80
5.5
50
4 mA
N/lb.
mJ
V~
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
V
I
V
t
ISOPLUS247
Features
Advantages
Applications
G = Gate
E = Emitter
C110
fi(typ)
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
CES
CE(sat)
G
C
= 600V
= 68A
= 150ns
≤ ≤ ≤ ≤ ≤ 1.80V
E
TM
C
= Collector
Isolated Tab
DS100420(11/11)

Related parts for IXXR100N60B3H1

IXXR100N60B3H1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 70A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXR100N60B3H1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 145 68 54 440 50 600 = 2Ω 200 G CM ≤ CES = 150° ...

Page 2

... Characteristic Values Min. Typ. 1 150°C 1 100°C J 140 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXR100N60B3H1 ISOPLUS247 (IXXR) Outline Max 2 0.31 °C/W °C Gate ...

Page 3

... J = 15V GE 13V 11V 12V 10V 2 25º IXXR100N60B3H1 Fig. 2. Extended Output Characteristics @ 15V 14V GE 13V Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V 140A 1.6 C 1.4 1 70A C 1 ...

Page 4

... C oes 100 res 0.1 25µs 100µs 1ms 0.01 10ms 100ms DC 0.001 100 1000 - Volts IXXR100N60B3H1 Fig. 8. Gate Charge V = 300V 70A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...

Page 5

... Ω 15V G GE 240 V = 360V CE 240 220 200 200 180 160 160 120 140 80 120 40 100 100 IXXR100N60B3H1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 360V 150º Amperes C Fig ...

Page 6

... 50A 100 125 150 IXXR100N60B3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 360V 150ºC, 25º ...

Page 7

... I =120A 120 60A F 110 100 90 80 160 0 200 400 600 -di /dt Fig. 26 Typ Recovery Time t F 0.01 0.1 IXXR100N60B3H1 100° =120A 60A 1000 0 200 400 A/μs /dt F Fig. 24 Typ. Peak Reverse Current I = 100° ...

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