IXXP50N60B3 IXYS, IXXP50N60B3 Datasheet - Page 3

• Manufacturer Part Number: IXXP50N60B3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXP50N60B3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 120
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 135
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.2
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-220

© 2011 IXYS CORPORATION, All Rights Reserved
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0
8
0
18A
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
9
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
10
1
Gate-to-Emitter Voltage
1
36A
V
1.5
V
CE
11
V
CE
GE
- Volts
- Volts
1.5
- Volts
V
GE
V
GE
12
= 15V
2
I
= 15V
14V
13V
C
14V
13V
= 72A
2
2.5
13
J
J
= 150ºC
= 25ºC
T
2.5
J
14
3
= 25ºC
12V
11V
10V
12V
11V
10V
9V
8V
7V
6V
9V
8V
7V
3.5
15
3
200
180
160
140
120
100
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
-50
0
4
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
5
= 15V
IXXA50N60B3 IXXP50N60B3
5
6
0
Fig. 4. Dependence of V
Fig. 6. Input Admittance
10
Junction Temperature
25
7
T
J
- Degrees Centigrade
V
T
CE
J
50
V
8
= 150ºC
GE
15
- Volts
25ºC
V
- Volts
GE
75
9
= 15V
I
I
I
IXXH50N60B3
C
C
C
14V
20
= 72A
= 36A
= 18A
CE(sat)
100
- 40ºC
10
13V
on
125
11
25
12V
J
= 25ºC
11V
150
12
10V
30
9V
7V
175
13