MMIX1X100N60B3H1 IXYS, MMIX1X100N60B3H1 Datasheet - Page 5

• Manufacturer Part Number: MMIX1X100N60B3H1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of MMIX1X100N60B3H1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 105
• Ic90, Tc = 90°c, Igbt, (a): 60
• Ic110, Tc = 110°c, Igbt, (a): -
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.80
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 150
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 2.8
• Rthjc, Max, Igbt (c/w): 0.50
• If, Tc = 90°c, Diode (a): 54
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): 0.62
• Package Style: MMIX

© 2011 IXYS CORPORATION, All Rights Reserved
10,000
1,000
1000
100
100
0.1
80
70
60
50
40
30
20
10
10
10
0
1
0
0
1
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
20
= 150ºC
= 25ºC
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
40
10
60
Fig. 7. Transconductance
10
Fig. 9. Capacitance
15
80
V
DS
I
V
C
CE
- Amperes
- Volts
100
- Volts
20
120
25
100
C oes
C res
C ies
140
T
30
J
= - 40ºC
160
25ºC
150ºC
35
DC
180
25µs
100µs
1ms
10ms
100ms
1000
200
40
0.001
220
200
180
160
140
120
100
0.01
0.1
16
14
12
10
80
60
40
20
0.00001
8
6
4
2
0
0
1
100
0
T
R
dv / dt < 10V / ns
Fig. 12. Maximum Transient Thermal Impedance
V
I
I
150
J
G
C
G
CE
= 150ºC
= 2
= 70A
= 10mA
= 300V
20
0.0001
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
MMIX1X100N60B3H1
250
40
0.001
Fig. 8. Gate Charge
300
Pulse Width - Seconds
Q
G
60
- NanoCoulombs
V
350
CE
0.01
- Volts
80
400
450
100
0.1
500
120
550
1
600
140
650
10