IXXH30N60B3D1 IXYS, IXXH30N60B3D1 Datasheet - Page 4

• Manufacturer Part Number: IXXH30N60B3D1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH30N60B3D1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 60
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 30
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.85
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 125
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 0.7
• Rthjc, Max, Igbt (c/w): 0.55
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1000
100
100
0.1
10
22
20
18
16
14
12
10
10
1
8
6
4
2
0
1
0
0
V
f
CE(sat)
= 1 MHz
5
T
T
Single Pulse
J
C
= 175ºC
5
= 25ºC
Fig. 11. Forward-Bias Safe Operating Area
Limit
10
15
10
Fig. 7. Transconductance
10
20
Fig. 9. Capacitance
15
V
25
DS
I
V
C
CE
- Volts
- Amperes
- Volts
20
30
35
25
100
C ies
C oes
C res
40
T
J
30
45
= - 40ºC
25ºC
150ºC
50
DC
35
55
100µs
25µs
1ms
10ms
1000
40
60
0.001
0.01
0.1
16
14
12
10
55
50
45
40
35
30
25
20
15
10
0.00001
8
6
4
2
0
5
0
1
100
0
T
R
dv / dt < 10V / ns
J
G
V
I
I
Fig. 12. Maximum Transient Thermal Impedance
C
G
CE
= 150ºC
= 10
= 24A
= 10mA
= 300V
5
Ω
Fig. 10. Reverse-Bias Safe Operating Area
0.0001
200
10
Fig. 8. Gate Charge
300
Pulse Width - Second
Q
15
0.001
G
IXXH30N60B3D1
- NanoCoulombs
V
CE
20
- Volts
400
0.01
25
500
30
0.1
35
600
40
1