IXXH30N60C3D1 IXYS, IXXH30N60C3D1 Datasheet - Page 4

• Manufacturer Part Number: IXXH30N60C3D1
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXH30N60C3D1

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 60
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 30
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 32
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 0.4
• Rthjc, Max, Igbt (c/w): 0.55
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): 30
• Rthjc, Max, Diode (k/w): 0.90
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1000
100
100
0.1
10
10
22
20
18
16
14
12
10
1
8
6
4
2
0
1
0
0
f
V
T
T
Single Pulse
= 1 MHz
CE(sat)
J
C
5
= 175ºC
= 25ºC
5
Fig. 11. Forward-Bias Safe Operating Area
Limit
10
10
15
Fig. 7. Transconductance
10
Fig. 9. Capacitance
20
15
V
DS
I
V
C
CE
25
- Volts
- Amperes
- Volts
20
30
25
35
100
C ies
C oes
C res
T
J
= - 40ºC
40
30
25ºC
150ºC
45
DC
35
50
25µs
100µs
1ms
10ms
1000
40
55
0.001
0.01
0.1
16
14
12
10
55
50
45
40
35
30
25
20
15
10
0.00001
8
6
4
2
0
5
0
1
100
0
T
R
dv / dt < 10V / ns
V
I
I
Fig. 12. Maximum Transient Thermal Impedance
C
G
J
G
CE
= 150ºC
= 24A
= 10mA
= 10
= 300V
5
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
0.0001
10
Fig. 8. Gate Charge
300
Pulse Width - Second
Q
15
0.001
G
IXXH30N60C3D1
- NanoCoulombs
V
CE
20
- Volts
400
0.01
25
500
30
0.1
35
600
40
1