VWM270-0075X2 IXYS, VWM270-0075X2 Datasheet

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VWM270-0075X2

Manufacturer Part Number
VWM270-0075X2
Description
6 Pack VWM Modules
Manufacturer
IXYS
Datasheet
1.VWM270-0075X2.pdf (6 pages)

Specifications of VWM270-0075X2

Vdss, Max, (v)
75
Id25, Tc = 25°c, (a)
270
Id80, Tc = 80°c, (a)
215
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
2.1
Tf, Typ, (ns)
15
Tr, Typ, (ns)
20
Rthjc, Max, (ºc/w)
0.44
Package Style
V2-Pack
Three phase full bridge
with Trench MOSFETs
© 2011 IXYS All rights reserved
MOSFET T1 - T6
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
E
E
R
R
1)
DSS
GSS
D25
D80
F25
F80
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GS(th)
GS
on
off
rec
on
off
rec
V
DSS
DSon
thJC
thJH
g
gs
gd
DS
= I
1)
D
·(R
DS(on)
Conditions
T
T
T
T
T
Conditions
V
V
V
V
V
inductive load
V
I
R
inductive load
V
I
R
with heat transfer paste (IXYS test setup)
D
D
VJ
C
C
C
C
GS
DS
DS
GS
GS
GS
GS
G
G
= 230 A; R
= 230 A; R
= 25°C
= 80°C
= 25°C (diode)
= 80°C (diode)
+ 2R
= R
= R
= 25°C to 150°C
= 75 V; V
= 10 V; I
= 20 V; I
= ± 20 V; V
= 10 V; V
= 10 V; V
= 10 V; V
(T
G ext
G ext
Pin to Chip
VJ
= 25°C, unless otherwise specified)
+ R
+ R
D
D
G
G
GS
DS
DS
DS
)
= 100 A; on chip level
= 0.5 mA
out driver
out driver
= 10 Ω
= 10 Ω
DS
= ½V
= 37 V
= 37 V
= 0 V
= 0 V
DSS
; I
G1
G2
S1
S2
L+
D
L-
T
T
= 230 A
T
T
VJ
VJ
VJ
VJ
= 25°C
= 125°C
= 25°C
= 125°C
T1
T2
G3
G4
S3
S4
min.
2
Characteristic Values
T3
T4
Maximum Ratings
0.23
3.49
0.04
2.95
0.06
typ.
360
105
140
225
380
265
145
240
410
230
0.66
0.3
80
G5
G6
S6
S5
max.
0.44
± 20
270
215
280
180
300
2.1
0.4
10
75
T5
T6
4
K/W
K/W
mW
mJ
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
µA
µA
µA
ns
ns
ns
ns
ns
ns
ns
ns
L1
L2
L3
V
V
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low R
- optimized intrinsic reverse diode
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
DSS
DS(on)
with optimized heat transfer
VWM 270-0075X2
DSon
= 75 V
= 270 A
= 2.1 mΩ
20110321a
1 - 6

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VWM270-0075X2 Summary of contents

Page 1

... Ω 230 ext out driver off E rec R thJC R with heat transfer paste (IXYS test setup) thJH ·( DS(on) Pin to Chip © 2011 IXYS All rights reserved ...

Page 2

... M Mounting torque (M5) d Symbol Conditions R 1) pin to chip Weight ·( DS(on) Pin to Chip © 2011 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. 1.1 85 2.2 38 Maximum Ratings -40...+175 -40...+125 500 2 - 2.5 Characteristic Values min. typ. ...

Page 3

... Dimensions 0.0394“) 4x45° ±0.15 0.5 © 2011 IXYS All rights reserved 65 93 dX2 dX1 X ±0 78.5 ±0.3 80 ±0.3 VWM 270-0075X2 38 40.4 +0.3 Detail Y M 5:1 Ø1.5 (DIN 46 431) 0.5±0.2 ¨ Detail Z M 2:1 Ø 6.1 Ø ...

Page 4

... Fig. 3 Typ. Output Characteristics 300 250 200 I D 150 [ 150°C J 25°C 100 -40° 3.5 4.0 4.5 5 Fig. 5 Typ. Transfer Characteristics © 2011 IXYS All rights reserved 25° [ 1.5 2 DSon norm 1.5 2.0 V [V] 5.5 6.0 6.5 ...

Page 5

... 0.6 E rec 0.4 [mJ [Ω] G Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching © 2011 IXYS All rights reserved [ 100 125 150 500 400 300 E t off ...

Page 6

... C [pF] 1000 100 [V] DS Fig. 13 Typ. Capacitances 0.5 0.4 0 [K/W] 0.2 0.1 0 Fig. 15 Typ. Transient Thermal Resistance per MOSFET © 2011 IXYS All rights reserved 500 MHz 400 C iss I 300 S [A] C 200 oss 100 C rss 0.2 100 1000 10000 t [ms] ...

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