GMM3x180-004X2-SMD IXYS, GMM3x180-004X2-SMD Datasheet

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GMM3x180-004X2-SMD

Manufacturer Part Number
GMM3x180-004X2-SMD
Description
Manufacturer
IXYS
Datasheet

Specifications of GMM3x180-004X2-SMD

Vdss, Max, (v)
40
Id25, Tc = 25°c, (a)
180
Id80, Tc = 80°c, (a)
-
Id90, Tc = 90°c, (a)
136
Rds(on), Max, Tj = 25°c, (mohms)
2.5
Tf, Typ, (ns)
170
Tr, Typ, (ns)
240
Rthjc, Max, (ºc/w)
1.0
Package Style
ISOPLUS-DIL™
Preliminary data
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
MOSFETs
Symbol
V
V
I
I
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
R
R
1)
DSS
GSS
D25
D90
D110
F25
F90
F110
d(on)
r
d(off)
f
GS(th)
GS
on
off
recoff
V
DSS
DSon
thJC
thJH
g
gs
gd
DS
= I
1)
D
·(R
DS(on)
Conditions
T
T
T
T
T
T
T
Conditions
on chip level at
V
V
V
V
V
inductive load
V
I
T
with heat transfer paste (IXYS test setup)
D
J
VJ
C
C
C
C
C
C
GS
DS
DS
GS
GS
GS
= 135 A; R
= 125°C
= 25°C
= 90°C
= 110°C
= 25°C (diode)
= 90°C (diode)
= 110°C (diode)
+ R
= 25°C to 150°C
= V
= 10 V
= 20 V; I
= ± 20 V; V
= 10 V; V
= +10/0 V; V
Pin to Chip
DSS
; V
)
D
GS
DS
G
= 1 mA
= 39 Ω;
DS
= 0 V
= 20 V; I
DS
= 0 V
= 15 V
D
= 100 A
T
T
T
T
VJ
VJ
VJ
VJ
(T
= 25°C
= 125°C
= 25°C
= 125°C
VJ
G2
S2
G1
S1
= 25°C, unless otherwise specified)
min.
2.5
L1+
L1-
G3
L1
G4
S4
S3
Characteristic Values
0.003
Maximum Ratings
0.12
0.51
typ.
110
150
240
350
170
1.9
2.8
1.3
50
33
30
L2
L2+
G5
L2-
S5
G6
S6
max.
± 20
180
136
120
182
112
2.5
5.3
4.5
0.2
1.0
1.6
40
88
5
K/W
K/W
mW
mW
mJ
mJ
mJ
nC
nC
nC
µA
µA
µA
L3+
L3-
ns
ns
ns
ns
L3
V
V
A
A
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
• Space and weight savings
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low R
- optimized intrinsic reverse diode
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
- isolated DCB ceramic base plate
DSS
DSon typ.
connections
with optimized heat transfer
GMM 3x180-004X2
DSon
= 1.9 mW
= 40 V
= 180 A
20110307b
1 - 7

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GMM3x180-004X2-SMD Summary of contents

Page 1

... E recoff R thJC R with heat transfer paste (IXYS test setup) thJH ·( DS(on) Pin to Chip IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved L1+ L2 ...

Page 2

... P pins and back side metallization Weight ·( DS(on) Pin to Chip IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 0.9 1.2 38 0.31 14 ...

Page 3

... Part Name & Leads Ordering Packing Unit Marking SMD Standard GMM 3x180-004X2 - SMD IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Part Marking Delivering Mode GMM 3x180-004X2 Blister GMM 3x180-004X2 Ordering Base Qty. ...

Page 4

... IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved GMM 3x180-004X2 20110307b ...

Page 5

... DS(on) norm. 1.0 R normalized DS(on) 0.5 0.0 - [°C] VJ Fig. 5 Typ. drain source on-state resistance R versus junction temperature T IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved I D [A] 75 100 125 150 DSS VJ = 25° 6 [A] 5 ...

Page 6

... E x10 rec(on) 0 [Ω] G Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 200 180 160 140 120 I D 100 [ ...

Page 7

... F Fig. 15 Typ. reverse recovery charge Q of the body diodes versus di/dt Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 125° ...

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