IXTP48P05T IXYS, IXTP48P05T Datasheet - Page 4

• Manufacturer Part Number: IXTP48P05T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTP48P05T

• Vdss, Max, (v): -50
• Id(cont), Tc=25°c, (a): -48
• Rds(on), Max, Tj=25°c, (?): 0.03
• Ciss, Typ, (pf): 3660
• Qg, Typ, (nc): 53
• Trr, Typ, (ns): 30
• Trr, Max, (ns): -
• Pd, (w): 150
• Rthjc, Max, (k/w): 0.83
• Package Style: TO-220

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
-160
-140
-120
-100
100
-60
-50
-40
-30
-20
-10
-80
-60
-40
-20
0
0
-3.0
-0.2
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-3.5
-0.4
-5
-4.0
-10
-0.6
Fig. 7. Input Admittance
T
J
Fig. 11. Capacitance
-4.5
-15
= 125ºC
-0.8
V
V
V
GS
SD
DS
-5.0
-1.0
-20
- Volts
- Volts
- Volts
T
T
J
J
= 125ºC
= 25ºC
- 40ºC
25ºC
-5.5
-1.2
-25
C oss
C rss
C iss
-6.0
-1.4
-30
-6.5
-1.6
-35
-7.0
-1.8
-40
-
1,000
-
100
-
-10
10
-
40
35
30
25
20
15
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
5
0
0
-
0
1
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
5
= 150ºC
= 25ºC
= - 24A
= -1mA
= - 27.5V
-10
Fig. 12. Forward-Bias Safe Operating Area
10
R
IXTY48P05T IXTA48P05T
15
DS(on)
-20
Fig. 8. Transconductance
Fig. 10. Gate Charge
Limit
20
Q
G
-30
I
- NanoCoulombs
D
25
- Amperes
V
-
DS
10
- Volts
30
-40
35
IXTP48P05T
-50
T
40
J
= - 40ºC
125ºC
25ºC
DC
45
-60
25µs
100µs
1ms
10ms
100ms
50
-
-70
55
100