IXTY18P10T IXYS, IXTY18P10T Datasheet - Page 5

• Manufacturer Part Number: IXTY18P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTY18P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -18
• Rds(on), Max, Tj=25°c, (?): 0.12
• Ciss, Typ, (pf): 2100
• Qg, Typ, (nc): 39
• Trr, Typ, (ns): 62
• Trr, Max, (ns): -
• Pd, (w): 83
• Rthjc, Max, (k/w): 1.5
• Package Style: TO-252

© 2010 IXYS CORPORATION, All Rights Reserved
27
26
25
24
23
22
21
20
19
30
28
26
24
22
20
18
16
14
29
28
27
26
25
24
23
22
21
20
10
-9
25
Fig. 17. Resistive Turn-off Switching Times vs.
Fig. 15. Resistive Turn-on Switching Times vs.
12
-10
35
t
T
V
T
r
J
DS
J
= 125ºC, V
= 25ºC
Fig. 13. Resistive Turn-on Rise Time vs.
= - 50V
14
-11
45
16
t
d(on)
GS
55
-12
I
= -10V
Junction Temperature
D
Gate Resistance
T
- - - -
= -18A, - 9A
Drain Current
18
J
- Degrees Centigrade
R
I
65
-13
D
G
- Amperes
- Ohms
20
t
R
V
f
DS
G
75
= 10Ω, V
-14
= - 50V
T
22
I
I
J
D
D
= 125ºC
= - 9A
= -18A
85
GS
-15
t
d(off)
24
= -10V
R
V
- - - -
DS
95
G
-16
= 10Ω , V
26
= - 50V
105
-17
28
GS
= -10V
115
30
-18
80
70
60
50
40
30
20
10
0
54
51
48
45
42
39
36
33
30
125
25
24
23
22
21
20
19
65
60
55
50
45
40
35
30
25
20
15
30
29
28
27
26
25
24
23
22
21
25
10
-9
t
T
V
Fig. 18. Resistive Turn-off Switching Times vs.
Fig. 16. Resistive Turn-off Switching Times vs.
12
f
R
V
J
DS
35
DS
= 125ºC, V
G
-10
= 10Ω , V
= - 50V
= - 50V
14
45
Fig. 14. Resistive Turn-on Rise Time vs.
-11
t
GS
16
GS
d(off)
I
= -10V
= -10V
D
55
Junction Temperature
= - 9A, -18A
- - - -
18
T
IXTY18P10T IXTA18P10T
-12
J
Gate Resistance
- Degrees Centigrade
65
20
I
R
D
Drain Current
G
= -18A, - 9A
I
D
-13
- Ohms
22
- Amperes
75
t
R
V
f
G
DS
= 10Ω, V
24
= - 50V
-14
85
T
T
J
J
= 25ºC
= 125ºC
26
95
GS
t
d(off)
-15
= -10V
28
IXTP18P10T
- - - -
105
30
-16
115
32
-17
125
34
110
100
90
80
70
60
50
40
30
20
10
54
50
46
42
38
34
30
-18