IXTY26P10T IXYS, IXTY26P10T Datasheet - Page 5

• Manufacturer Part Number: IXTY26P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTY26P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -26
• Rds(on), Max, Tj=25°c, (?): 0.09
• Ciss, Typ, (pf): 3820
• Qg, Typ, (nc): 52
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 150
• Rthjc, Max, (k/w): 0.83
• Package Style: TO-252

© 2010 IXYS CORPORATION, All Rights Reserved
14
13
12
11
10
50
40
30
20
10
18
17
16
15
14
13
12
9
8
0
-12
25
3
Fig. 15. Resistive Turn-on Switching Times vs.
T
V
t
Fig. 17. Resistive Turn-off Switching Times vs.
R
V
t
J
4
r
DS
f
G
DS
35
= 125ºC, V
= 3Ω, V
= - 50V
-14
= - 50V
5
Fig. 13. Resistive Turn-on Rise Time vs.
T
45
J
GS
= 25ºC, 125ºC
I
I
t
GS
6
t
D
d(on)
= -10V
D
d(off)
-16
= - 26A
= -13A
= -10V
55
- - - -
7
- - - -
Junction Temperature
Gate Resistance
T
J
Drain Current
I
- Degrees Centigrade
-18
D
8
65
R
- Amperes
G
- Ohms
9
75
I
-20
D
10
= -13A, - 26A
85
11
-22
95
12
R
V
DS
G
= 3Ω, V
= - 50V
13
-24
105
GS
14
= -10V
115
-26
15
48
44
40
36
32
28
24
35
30
25
20
15
10
125
14
13
12
11
10
35
30
25
20
15
10
18
17
16
15
14
13
12
5
9
8
-12
25
3
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
T
V
t
f
J
4
DS
35
= 125ºC, V
I
= - 50V
D
-14
= -13A, - 26A
5
Fig. 14. Resistive Turn-on Rise Time vs.
45
t
d(off)
GS
6
IXTY26P10T
Junction Temperature
55
= -10V
-16
- - - -
T
7
J
T
T
Gate Resistance
- Degrees Centigrade
J
J
65
= 25ºC
= 125ºC
8
Drain Current
R
-18
I
D
G
75
- Amperes
- Ohms
9
I
D
10
85
= -13A
-20
R
V
t
f
DS
G
= 3Ω, V
11
= - 50V
95
12
IXTA26P10T
IXTP26P10T
R
V
-22
GS
I
DS
105
G
D
t
= 3Ω, V
d(off)
= -10V
= - 26A
= - 50V
13
115
- - - -
GS
14
-24
= -10V
125
15
70
60
50
40
30
20
10
80
70
60
50
40
30
20
-26