IXTT140P10T IXYS, IXTT140P10T Datasheet - Page 5

• Manufacturer Part Number: IXTT140P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTT140P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -140
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 31400
• Qg, Typ, (nc): 400
• Trr, Typ, (ns): 130
• Trr, Max, (ns): -
• Pd, (w): 568
• Rthjc, Max, (k/w): 0.22
• Package Style: TO-268

© 2011 IXYS CORPORATION, All Rights Reserved
200
180
160
140
120
100
32
30
28
26
24
22
50
40
30
20
10
80
60
40
-50
25
1
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
R
V
t
t
T
V
R
V
-60
f
G
DS
35
r
J
DS
G
DS
2
= 125ºC, V
= 1Ω, V
= 1Ω, V
= -100V
= -100V
= -100V
Fig. 13. Resistive Turn-on Rise Time vs.
-70
45
3
GS
GS
= -10V
t
GS
= -10V
t
d(off)
d(on)
I
D
= -10V
55
-80
= -140A
4
- - - -
Junction Temperature
Gate Resistance
- - - -
T
Drain Current
J
I
- Degrees Centigrade
D
65
-90
R
- Amperes
5
G
- Ohms
I
D
-100
75
= - 70A
6
T
J
= 125ºC
85
-110
7
I
I
D
D
95
= -140A
-120
= - 70A
8
T
105
J
-130
= 25ºC
9
115
-140
10
320
280
240
200
160
120
80
40
0
140
120
100
80
60
40
125
180
160
140
120
100
40
35
30
25
20
15
80
60
40
20
50
40
30
20
10
0
25
-50
1
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
t
R
V
35
f
R
V
G
DS
T
V
t
G
DS
-60
f
J
DS
= 1Ω, V
2
= -100V
= 125ºC, V
= 1Ω, V
= -100V
= -100V
Fig. 14. Resistive Turn-on Rise Time vs.
45
GS
3
GS
-70
t
= -10V
= -10V
d(off)
GS
55
t
d(off)
Junction Temperature
= -10V
T
4
- - - -
J
-80
Gate Resistance
- - - -
- Degrees Centigrade
65
R
Drain Current
5
I
G
D
-90
75
- Ohms
- Amperes
I
D
= - 70A
6
-100
85
7
95
T
-110
J
T
IXTT140P10T
IXTH140P10T
J
= 125ºC
= 25ºC
8
105
I
I
D
-120
D
I
I
= -140A
D
D
= - 70A
= - 140A
= - 70A
115
9
-130
125
10
360
320
280
240
200
160
120
80
40
0
140
120
100
80
60
40
-140