IXTR210P10T IXYS, IXTR210P10T Datasheet - Page 4

• Manufacturer Part Number: IXTR210P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTR210P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -158
• Rds(on), Max, Tj=25°c, (?): 0.008
• Ciss, Typ, (pf): 69500
• Qg, Typ, (nc): 740
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 390
• Rthjc, Max, (k/w): 0.32
• Package Style: ISOPLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-300
-250
-200
-150
-100
-350
-300
-250
-200
-150
-100
-50
-50
0
0
-0.3
-3
0
-0.4
f = 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-5
-3.5
-0.5
-10
-0.6
Fig. 7. Input Admittance
-4
Fig. 11. Capacitance
-0.7
T
-15
J
= 125ºC
V
V
-0.8
V
GS
SD
T
DS
J
-4.5
= 125ºC
-20
- Volts
- Volts
- Volts
- 40ºC
25ºC
-0.9
T
J
-25
-1.0
= 25ºC
-5
C oss
C iss
C rss
-1.1
-30
-1.2
-5.5
-35
-1.3
-1.4
-40
-6
-
1000
-
-
100
-
0.1
10
-
300
250
200
150
100
1
-10
50
-9
-8
-7
-6
-5
-4
-3
-2
-1
-
1
0
0
0
0
R
TJ = 150ºC
TC = 25ºC
Single Pulse
DS(on)
V
I
I
D
G
DS
= -105A
= -1mA
Fig. 12. Forward-Bias Safe Operating Area
= - 50V
Limit
100
-50
200
Fig. 8. Transconductance
-100
Fig. 10. Gate Charge
Q
300
G
V
- NanoCoulombs
DS
T
I
-
D
10
J
- Amperes
= - 40ºC
- Volts
-150
IXTR210P10T
400
25ºC
125ºC
500
-200
600
-250
-
700
100
100µs
1ms
10ms
100ms
DC
-300