IXTN210P10T IXYS, IXTN210P10T Datasheet - Page 4

• Manufacturer Part Number: IXTN210P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTN210P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -210
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 69500
• Qg, Typ, (nc): 740
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.15
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-300
-250
-200
-150
-100
-350
-300
-250
-200
-150
-100
-50
-50
0
0
-0.3
-3
0
-0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
f
-5
= 1 MHz
-3.5
-0.5
-10
-0.6
Fig. 7. Input Admittance
T
J
-4
Fig. 11. Capacitance
= 125ºC
-0.7
-15
V
V
-0.8
V
T
GS
SD
J
DS
= 125ºC
-4.5
-20
- Volts
- Volts
- Volts
- 40ºC
25ºC
-0.9
T
J
= 25ºC
-25
-1.0
-5
C oss
C rss
C iss
-1.1
-30
-1.2
-5.5
-35
-1.3
-1.4
-40
-6
-
1000
-
100
300
250
200
150
100
-
-10
10
50
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
0
0
-
1
0
0
T
T
Single Pulse
V
I
I
D
G
J
C
DS
R
External Lead Current Limit
= 150ºC
Fig. 12. Forward-Bias Safe Operating Area
= -105A
= -1mA
DS(on)
= 25ºC
100
= - 50V
-50
Limit
200
Fig. 8. Transconductance
-100
Fig. 10. Gate Charge
Q
300
G
V
I
- NanoCoulombs
T
D
DS
J
-
- Amperes
10
= - 40ºC
-150
- Volts
IXTN210P10T
400
25ºC
125ºC
-200
500
600
-250
-
700
100
100µs
1ms
10ms
100ms
DC
-300