IXTK210P10T IXYS, IXTK210P10T Datasheet - Page 4

• Manufacturer Part Number: IXTK210P10T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTK210P10T

• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -210
• Rds(on), Max, Tj=25°c, (?): 0.0075
• Ciss, Typ, (pf): 69500
• Qg, Typ, (nc): 740
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1040
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-300
-250
-200
-150
-100
-350
-300
-250
-200
-150
-100
-50
-50
0
0
-0.3
-3
0
-0.4
f = 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-5
-3.5
-0.5
-10
-0.6
Fig. 7. Input Admittance
-4
Fig. 11. Capacitance
-0.7
T
-15
J
= 125ºC
V
V
-0.8
V
GS
SD
T
DS
J
-4.5
= 125ºC
-20
- Volts
- Volts
- Volts
- 40ºC
25ºC
-0.9
T
J
-25
-1.0
= 25ºC
-5
C oss
C iss
C rss
-1.1
-30
-1.2
-5.5
-35
-1.3
-1.4
-40
-6
-
1,000
-
300
250
200
150
100
100
-
-10
50
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
1
-
0
0
1
V
I
I
T
T
Single Pulse
D
G
DS
J
C
= -105A
= -1mA
External Lead Current Limit
= 150ºC
= 25ºC
= - 50V
100
Fig. 12. Forward-Bias Safe Operating Area
R
-50
DS(on)
Limit
200
Fig. 8. Transconductance
-100
Fig. 10. Gate Charge
Q
300
G
- NanoCoulombs
T
I
D
V
J
DS
-
- Amperes
= - 40ºC
10
-150
- Volts
400
25ºC
125ºC
IXTK210P10T
IXTX210P10T
500
-200
600
-250
DC
700
-
100
100µs
1ms
10ms
100ms
-300