IXTH32P20T IXYS, IXTH32P20T Datasheet - Page 6

• Manufacturer Part Number: IXTH32P20T
• Description: TrenchP Channel Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTH32P20T

• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -32
• Rds(on), Max, Tj=25°c, (?): 0.13
• Ciss, Typ, (pf): 14500
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 190
• Trr, Max, (ns): -
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
16.0
15.5
15.0
14.5
14.0
13.5
13.0
160
140
120
100
13.0
12.5
12.0
11.5
11.0
10.5
80
60
40
20
0
25
0
-15
Fig. 15. Resistive Turn-on Switching Times vs.
Fig. 17. Resistive Turn-off Switching Times vs.
T
V
R
V
- 64A < I
t
J
r
DS
T
G
DS
-20
= 125ºC, V
J
35
2
= 1Ω , V
= 25ºC
= -100V
= -100V
Fig. 13. Resistive Turn-on Rise Time vs.
D
-25
< - 32A
45
4
GS
t
d(on)
GS
= -10V
= -10V
-30
55
- - - -
6
Gate Resistance
Junction Temperature
T
Drain Current
J
R
-35
I
- Degrees Centigrade
G
D
65
I
8
- Ohms
D
= - 64A, - 32A
- Amperes
-40
75
10
T
J
= 125ºC
-45
t
R
V
85
12
f
G
DS
= 10Ω, V
-50
= -100V
95
14
-55
GS
t
d(off)
= -10V
105
16
-60
- - - -
115
18
-65
90
80
70
60
50
40
30
20
10
70
65
60
55
50
45
125
140
120
100
80
60
40
20
15
14
13
12
11
10
16.0
15.5
15.0
14.5
14.0
13.5
13.0
0
9
25
0
-15
Fig. 18. Resistive Turn-off Switching Times vs.
Fig. 16. Resistive Turn-off Switching Times vs.
t
T
V
R
V
t
f
J
DS
35
f
G
DS
= 125ºC, V
2
R
V
25ºC < T
-20
= 1Ω, V
= -100V
G
DS
I
= -100V
D
= 1Ω , V
= -100V
= - 64A
Fig. 14. Resistive Turn-on Rise Time vs.
45
4
J
-25
GS
< 125ºC
t
GS
GS
t
d(off)
d(off)
= -10V
55
= -10V
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
= -10V
Junction Temperature
6
- - - -
-30
T
- - - -
Gate Resistance
J
- Degrees Centigrade
65
R
I
8
-35
D
G
Drain Current
- Amperes
- Ohms
75
10
-40
85
I
D
12
-45
= - 32A
95
I
D
14
-50
= - 32A
105
I
D
-55
16
= - 64A
115
-60
18
125
300
260
220
180
140
100
60
20
70
65
60
55
50
45
40
-65