IXFT120N25T IXYS, IXFT120N25T Datasheet - Page 5

• Manufacturer Part Number: IXFT120N25T
• Description: Trench HiperFETs
• Manufacturer: IXYS

Specifications of IXFT120N25T

• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.023
• Ciss, Typ, (pf): 11300
• Qg, Typ, (nc): 180
• Trr, Typ, (ns): 108
• Trr, Max, (ns): -
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-268

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35
30
25
20
15
32
28
24
20
16
12
500
450
400
350
300
250
200
150
100
50
60
25
0
2
Fig. 17. Resistive Turn-off Switching Times vs.
t
R
V
R
V
Fig. 15. Resistive Turn-on Switching Times vs.
f
t
V
G
DS
G
DS
T
r
I
35
DS
J
= 2Ω, V
D
= 2Ω , V
= 125V
= 125ºC, V
= 125V
4
= 120A
= 125V
70
Fig. 13. Resistive Turn-on Rise Time vs.
45
GS
GS
6
t
t
d(off
d(on)
= 10V
= 10V
GS
80
)
55
= 10V
- - - -
- - - -
Junction Temperature
8
R
I
T
D
Gate Resistance
G
Drain Current
J
I
- Amperes
- Degrees Centigrade
- Ohms
D
65
= 60A
10
90
T
J
75
T
J
= 25ºC
12
= 125ºC
100
85
14
I
D
95
= 120A
16
I
D
110
= 60A
105
18
120
110
100
90
80
70
60
50
40
30
20
115
120
100
80
60
40
20
125
34
30
26
22
18
14
10
500
450
400
350
300
250
200
150
100
32
28
24
20
16
12
50
0
25
60
2
Fig. 18. Resistive Turn-off Switching Times vs.
Fig. 16. Resistive Turn-off Switching Times vs.
t
R
V
f
R
V
G
DS
35
t
T
V
G
DS
= 2Ω, V
f
J
DS
= 2Ω , V
= 125V
= 125ºC, V
4
= 125V
= 125V
Fig. 14. Resistive Turn-on Rise Time vs.
70
45
GS
GS
t
= 10V
6
d(off)
t
= 10V
GS
d(off)
55
T
Junction Temperature
J
= 10V
- - - -
- Degrees Centigrade
- - - -
Gate Resistance
80
I
D
8
65
R
= 60A, 120A
G
Drain Current
- Ohms
I
D
- Amperes
75
10
90
85
12
T
T
J
J
I
= 125ºC
95
D
= 25ºC
IXFH120N25T
100
IXFT120N25T
= 120A
14
105
I
16
D
110
115
= 60A
18
125
400
360
320
280
240
200
160
120
80
40
0
90
80
70
60
50
40
30
120