IXTQ86N25T IXYS, IXTQ86N25T Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXTQ86N25T
Manufacturer Part Number
IXTQ86N25T
Description
Trench MOSFETs
Manufacturer
IXYS
Datasheet
1.IXTQ86N25T.pdf
(5 pages)
Specifications of IXTQ86N25T
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
86
Rds(on), Max, Tj=25°c, (?)
0.037
Ciss, Typ, (pf)
5330
Qg, Typ, (nc)
105
Trr, Typ, (ns)
156
Trr, Max, (ns)
-
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-3P
© 2007 IXYS CORPORATION, All rights reserved
65
55
45
35
25
15
28
26
24
22
20
18
16
14
5
34
30
26
22
18
14
10
20
2
25
Switching Times vs. Gate Resistance
t
T
V
Switching Times vs. Drain Current
4
r
I
J
DS
35
30
D
= 125ºC, V
Rise Time vs. Junction Temperature
= 125V
= 43A
T
T
T
Fig. 17. Resistive Turn-off
T
J
J
J
6
Fig. 15. Resistive Turn-on
J
45
= 125ºC
= 25ºC
= 125ºC
= 25ºC
40
Fig. 13. Resistive Turn-on
GS
t
8
d(on)
I
55
I
T
D
D
= 15V
R
J
= 86A
G
- Amperes
- - - -
- Degrees Centigrade
50
10
- Ohms
65
I
D
12
60
75
= 43A
t
R
V
f
DS
G
= 3.3 Ω , V
= 125V
14
I
85
D
70
= 86A
16
95
t
d(off)
GS
R
V
V
80
G
GS
DS
= 15V
18
- - - -
= 3.3Ω
105
= 15V
= 125V
20
90
115
33
31
29
27
25
23
21
80
75
70
65
60
55
50
45
125
100
30
28
26
24
22
20
18
16
90
80
70
60
50
40
30
20
10
35
30
25
20
15
10
25
2
Switching Times vs. Junction Temperature
20
I
D
Switching Times vs. Gate Resistance
= 43A
t
R
V
R
V
V
35
25
f
G
DS
t
T
V
GS
DS
G
4
f
J
DS
= 3.3 Ω , V
= 3.3 Ω
= 125V
= 125ºC, V
= 15V
= 125V
30
= 125V
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
6
35
T
Rise Time vs. Drain Current
t
J
I
Fig. 14. Resistive Turn-on
d(off)
55
D
- Degrees Centigrade
IXTH86N25T IXTQ86N25T
GS
= 43A, 86A
40
t
GS
8
d(off)
- - - -
= 15V
I
R
D
= 15V
65
G
= 86A
45
- - - -
I
10
D
- Ohms
- Amperes
50
75
12
55
85
60
14
T
T
95
J
J
= 25ºC
65
= 125ºC
IXYS REF: T_86N25T(6G) 01-04-07
16
IXTV86N25T
105
70
18
75
115
80
20
125
250
225
200
175
150
125
100
75
50
25
85
75
70
65
60
55
50
45
40
90