IXTC96N25T IXYS, IXTC96N25T Datasheet - Page 4

• Manufacturer Part Number: IXTC96N25T
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTC96N25T

• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 40
• Rds(on), Max, Tj=25°c, (?): 0.031
• Ciss, Typ, (pf): 6100
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 158
• Trr, Max, (ns): -
• Pd, (w): 147
• Rthjc, Max, (k/w): 0.85
• Package Style: ISOPLUSS220

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
200
180
160
140
120
100
140
120
100
100
80
60
40
20
80
60
40
20
10
0
0
0.4
3.4
0
f = 1 MHz
3.8
0.5
5
Fig. 9. Forward Voltage Drop of
4.2
0.6
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.6
T
0.7
Intrinsic Diode
J
15
V
= 125ºC
V
SD
DS
V
T
J
GS
- Volts
- Volts
= 125ºC
5
0.8
- Volts
20
- 40ºC
25ºC
5.4
0.9
25
T
J
= 25ºC
5.8
30
1
C oss
C iss
C rss
6.2
1.1
35
6.6
1.2
40
1.00
0.10
0.01
130
120
110
100
90
80
70
60
50
40
30
20
10
0.0001
10
0
9
8
7
6
5
4
3
2
1
0
0
0
10
V
I
I
D
G
DS
20
Fig. 12. Maximum Transient Thermal
= 25A
= 10mA
= 125V
0.001
20
40
30
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
40
G
60
0.01
I
- NanoCoulombs
D
Impedance
- Amperes
50
80
60
T
70
0.1
J
100
= - 40ºC
IXTC96N25T
125ºC
80
25ºC
120
90
1
100
140
110 120
160
10