IXFX220N17T2 IXYS, IXFX220N17T2 Datasheet - Page 4

• Manufacturer Part Number: IXFX220N17T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFX220N17T2

• Vdss, Max, (v): 170
• Id(cont), Tc=25°c, (a): 220
• Rds(on), Max, Tj=25°c, (?): 0.0063
• Ciss, Typ, (pf): 31000
• Qg, Typ, (nc): 500
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: PLUS247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
200
180
160
140
120
100
320
280
240
200
160
120
1.0
0.1
80
60
40
20
80
40
0
0
3.0
0.2
0
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
3.5
f
= 1 MHz
0.4
10
0.5
Fig. 7. Input Admittance
4.0
Fig. 11. Capacitance
T
J
15
= 150ºC
0.6
T
J
= 150ºC
V
V
V
SD
GS
DS
4.5
0.7
- Volts
20
- Volts
- Volts
25ºC
0.8
25
C oss
C rss
C iss
5.0
T
J
0.9
= 25ºC
- 40ºC
30
1.0
5.5
35
1.1
6.0
1.2
40
1,000
350
300
250
200
150
100
100
50
10
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
1
T
T
Single Pulse
R
J
C
V
I
I
DS(on)
20
D
G
= 175ºC
DS
50
= 25ºC
= 110A
= 10mA
= 85V
Fig. 12. Forward-Bias Safe Operating Area
Limit
40
100
60
Fig. 8. Transconductance
150
10
Fig. 10. Gate Charge
80
Q
200
G
I
- NanoCoulombs
D
V
100
- Amperes
DS
250
- Volts
120
300
IXFK220N17T2
IXFX220N17T2
140
100
350
160
T
25µs
100µs
1ms
J
400
= - 40ºC
180
25ºC
150ºC
450
200
1,000
500
220