IXTA80N12T2 IXYS, IXTA80N12T2 Datasheet - Page 5
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IXTA80N12T2
Manufacturer Part Number
IXTA80N12T2
Description
TrenchT2 MOSFETs
Manufacturer
IXYS
Datasheet
1.IXTP80N12T2.pdf
(6 pages)
Specifications of IXTA80N12T2
Vdss, Max, (v)
120
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.017
Ciss, Typ, (pf)
4740
Qg, Typ, (nc)
80
Trr, Typ, (ns)
90
Pd, (w)
325
Rthjc, Max, (k/w)
0.46
Package Style
TO-263
© 2010 IXYS CORPORATION, All Rights Reserved
20
19
18
17
16
15
14
13
12
11
10
180
160
140
120
100
40
35
30
25
20
15
10
80
60
40
20
0
25
40
10
Fig. 17. Resistive Turn-off Switching Times vs.
R
V
Fig. 15. Resistive Turn-on Switching Times vs.
G
DS
T
V
35
t
= 10Ω , V
J
r
DS
T
45
= 60V
= 125ºC, V
15
J
= 60V
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on Rise Time vs.
45
GS
50
20
t
GS
= 10V
d(on)
55
= 10V
Junction Temperature
- - - -
T
Gate Resistance
55
25
Drain Current
J
- Degrees Centigrade
I
D
65
R
- Amperes
G
- Ohms
60
30
75
I
D
I
= 80A
D
65
35
= 80A
I
R
V
t
85
D
f
G
DS
= 40A
= 10Ω, V
= 60V
40
70
95
GS
I
t
D
d(off)
= 10V
= 40A
105
45
75
- - - -
115
50
80
135
120
105
90
75
60
45
30
15
0
80
70
60
50
40
30
20
125
20
19
18
17
16
15
14
13
12
11
10
140
120
100
60
50
40
30
20
10
80
60
40
20
0
0
40
25
10
Fig. 18. Resistive Turn-off Switching Times vs.
Fig. 16. Resistive Turn-off Switching Times vs.
R
V
t
R
V
G
DS
T
V
t
35
f
DS
G
f
J
DS
= 10Ω , V
45
15
= 125ºC, V
= 60V
= 10Ω, V
= 60V
= 60V
Fig. 14. Resistive Turn-on Rise Time vs.
45
20
GS
GS
50
t
GS
t
d(off)
= 10V
= 10V
d(off)
55
Junction Temperature
= 10V
T
J
- - - -
Gate Resistance
- - - -
25
- Degrees Centigrade
55
65
R
Drain Current
I
G
D
I
D
= 40A
- Ohms
30
- Amperes
75
60
I
D
T
= 80A, 40A
85
J
T
35
J
= 125ºC
= 25ºC
I
D
65
= 80A
95
IXTA80N12T2
IXTP80N12T2
40
105
70
45
115
75
50
125
350
300
250
200
150
100
50
0
80
70
60
50
40
30
20
80